SCHEMBL12228751

SCHEMBL12228751

CCCCCCCCCOC1CC2CCC1C2

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GBA1 P04062 3/20 0.41
ALDH1A1 P00352 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
MEN1 O00255 1/20 0.33
THRB P10828 1/20 0.33
HTT P42858 1/20 0.33
KMT2A Q03164 1/20 0.33
MAPT P10636 1/20 0.33
EPHX2 P34913 4/20 0.33
ATM Q13315 1/20 0.33
CTSV O60911 1/20 0.32
CTSL P07711 1/20 0.32
CTSS P25774 1/20 0.32
CTSK P43235 1/20 0.32
GRM1 Q13255 1/20 0.32
PPP5C P53041 1/20 0.32
RECQL P46063 2/20 0.32
CES2 O00748 1/20 0.32
GLA P06280 1/20 0.32
HPGD P15428 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5164652 0.98 GBA1 (0.39) GBA1ALDH1A1TDP1MEN1THRB
SCHEMBL14619689 0.93 PPP5C (0.36) GBA1MAPTATMCTSVCTSL
SCHEMBL14318437 0.85 GRM1 (0.38) MAPTEPHX2ATMCTSVCTSL
SCHEMBL13677258 0.77 GRM1 (0.39) ALDH1A1MAPTEPHX2ATMGRM1
SCHEMBL76360 0.77 GRM1 (0.39) ALDH1A1MAPTEPHX2ATMGRM1
SCHEMBL2633205 0.77 GRM1 (0.39) ALDH1A1MAPTEPHX2ATMGRM1
SCHEMBL22507523 0.77 GRM1 (0.39) ALDH1A1MAPTEPHX2ATMGRM1
SCHEMBL9295785 0.76 GBA1 (0.52) GBA1ALDH1A1TDP1MEN1THRB
SCHEMBL10835988 0.74 ATM (0.38) ATMGRM1
SCHEMBL32688746 0.74 HTR2C (0.47) EPHX2ATMGRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed