SCHEMBL76360

SCHEMBL76360

CCOC1CC2CCC1C2

nearest known ligand 0.42

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
GRM1 Q13255 6/20 0.39
ATM Q13315 1/20 0.38
ALDH1A1 P00352 2/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
EPHX2 P34913 1/20 0.36
CYP19A1 P11511 1/20 0.35
MAPT P10636 1/20 0.34
PDGFRB P09619 2/20 0.33
PDGFRA P16234 2/20 0.33
HSD11B1 P28845 1/20 0.32
POLB P06746 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2633205 1.00 GRM1 (0.39) GRM1ATMALDH1A1SMN1; SMN2EPHX2
SCHEMBL13677258 1.00 GRM1 (0.39) GRM1ATMALDH1A1SMN1; SMN2EPHX2
SCHEMBL22507523 1.00 GRM1 (0.39) GRM1ATMALDH1A1SMN1; SMN2EPHX2
SCHEMBL2627957 0.88 ALDH1A1 (0.38) GRM1ALDH1A1SMN1; SMN2EPHX2
SCHEMBL2739891 0.84 GRM1 (0.38) GRM1ATMEPHX2CYP19A1MAPT
SCHEMBL14318437 0.83 GRM1 (0.38) GRM1ATMEPHX2CYP19A1MAPT
SCHEMBL19480323 0.80 GRM1 (0.33) GRM1
SCHEMBL14619689 0.79 PPP5C (0.36) GRM1ATMSMN1; SMN2CYP19A1MAPT
SCHEMBL2739878 0.78 ATM (0.36) GRM1ATMCYP19A1MAPTPDGFRB
SCHEMBL5164652 0.78 GBA1 (0.39) GRM1ATMALDH1A1EPHX2CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 753 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313523-A1 FRAGRANCE AND FLAVOR COMPOSITIONS COMPRISING NORBORNANE AND NORBORNENE DERIVATIVES OSMO LABS, PBC 2025-10-09 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-20070128555-A1 Novel ester compound, polymer, resist composition, and patterning process CENTRAL GLASS CO., LTD. 2007-06-07 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-20070037091-A1 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability KOITABASHI RYUJI 2007-02-15 US disclosed
US-20070037091-A1 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability KOITABASHI RYUJI 2007-02-15 US disclosed
US-20060281022-A1 Polymeric compound containing a repeated unit having a 2-oxatricyclo [4.2.1.0 4.8] nonan-3-one ring and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-12-14 US disclosed
EP-1681307-A1 POLYMERIC COMPOUND CONTAINING REPEATING UNIT HAVING 2-OXATRICYCLO[4.2.1.04,8]NONAN-3-ONE RING, AND PHOTORESIST RESIN COMPOSITION Daicel Chemical Industries, Ltd. (JP) 2006-07-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250313523-A1 FRAGRANCE AND FLAVOR COMPOSITIONS COMPRISING NORBORNANE AND NORBORNENE DERIVATIVES CYP8B1, CYP1B1, BBOX1 GRM1 1509/4885ATM 4541/4885ALDH1A1 117/4885
US-20070128555-A1 Novel ester compound, polymer, resist composition, and patterning process C9, RER1, ARF1 GRM1 3302/4885ATM 3875/4885ALDH1A1 2583/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.