SCHEMBL12263294

SCHEMBL12263294

C=C(C)C(=O)OC1CC2CC1CC2CC(C)(C)O

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL775914 0.87
SCHEMBL14865668 0.85
SCHEMBL524812 0.85
SCHEMBL28225030 0.82 ALDH1A1 (0.33) ALDH1A1
SCHEMBL75209 0.82 ALDH1A1 (0.33) ALDH1A1
SCHEMBL2776600 0.82 ALDH1A1 (0.33) ALDH1A1
SCHEMBL22811897 0.82 ALDH1A1 (0.33) ALDH1A1
SCHEMBL15721248 0.82
SCHEMBL27209638 0.81 ALDH1A1 (0.41) ALDH1A1
SCHEMBL10064365 0.81 ALDH1A1 (0.33) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9851639-B2 Photoacid generating polymers containing a urethane linkage for lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2017-12-26 US disclosed
US-20150340246-A1 METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-11-26 US disclosed
US-8877429-B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same JSR CORPORATION (JP) 2014-11-04 US disclosed
US-20130260313-A1 PHOTOACID GENERATING POLYMERS CONTAINING A URETHANE LINKAGE FOR LITHOGRAPHY CENTRAL GLASS CO., LTD. (JP) 2013-10-03 US disclosed
US-20110223544-A1 RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME JSR CORPORATION (JP) 2011-09-15 US disclosed
US-20110111349-A1 RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME JSR CORPORATION (JP) 2011-05-12 US disclosed