⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL775914 | 0.88 | — | — | |
| SCHEMBL25702802 | 0.87 | ALDH1A1 (0.30) | — | |
| SCHEMBL14865668 | 0.87 | — | — | |
| SCHEMBL13716021 | 0.87 | — | — | |
| SCHEMBL15721248 | 0.86 | — | — | |
| SCHEMBL12263294 | 0.85 | ALDH1A1 (0.30) | — | |
| SCHEMBL25894868 | 0.84 | — | — | |
| SCHEMBL22317681 | 0.83 | ALDH1A1 (0.41) | — | |
| SCHEMBL14533207 | 0.83 | ALDH1A1 (0.41) | — | |
| SCHEMBL14749069 | 0.83 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 244 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024150553-A1 | RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND | JSR株式会社 | 2024-07-18 | — | — | WO | disclosed |
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| WO-2024127808-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | JSR株式会社 | 2024-06-20 | — | — | WO | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| WO-2023228841-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023223624-A1 | RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RADIATION SENSITIVE ACID GENERATOR, AND ACID DIFFUSION CONTROL AGENT | JSR株式会社 | 2023-11-23 | — | — | WO | disclosed |
| WO-2023189503-A1 | RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE | JSR株式会社 | 2023-10-05 | — | — | WO | disclosed |
| WO-2023189502-A1 | RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE | JSR株式会社 | 2023-10-05 | — | — | WO | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-7255973-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7255973-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| EP-1757628-A1 | LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2007-02-28 | — | — | EP | disclosed |
| EP-1589377-A2 | Patterning process and resist overcoat material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-10-26 | — | — | EP | disclosed |
| US-20050233254-A1 | Patterning process and resist overcoat material | SHIN-ETSU CHEMICAL CO., LTD. | 2005-10-20 | — | — | US | disclosed |
| US-20050131248-A1 | Process for producing alpha-substituted acrylic norbornanyyl compounds | CENTRAL GLASS COMPANY, LIMITED (JP) | 2005-06-16 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |