Known targets — ChEMBL curated mechanism
ADORA1ADORA2AADORA2BADORA3PDE3APDE3BPDE4APDE4BPDE4CPDE4D
The experimentally established mechanism targets of Catechol. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 6/20 | 0.62 |
| ▸ | KDM4E | B2RXH2 | 6/20 | 0.62 |
| ▸ | LMNA | P02545 | 5/20 | 0.62 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.62 |
| ▸ | ALOX15 | P16050 | 4/20 | 0.62 |
| ▸ | RECQL | P46063 | 4/20 | 0.62 |
| ▸ | TDP1 | Q9NUW8 | 4/20 | 0.62 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.62 |
| ▸ | HIF1A | Q16665 | 3/20 | 0.62 |
| ▸ | HPGD | P15428 | 3/20 | 0.62 |
| ▸ | CA2 | P00918 | 3/20 | 0.62 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.62 |
| ▸ | APEX1 | P27695 | 2/20 | 0.62 |
| ▸ | THPO | P40225 | 2/20 | 0.62 |
| ▸ | MTOR | P42345 | 2/20 | 0.62 |
| ▸ | BLM | P54132 | 2/20 | 0.62 |
| ▸ | PMP22 | Q01453 | 2/20 | 0.62 |
| ▸ | EGFR | P00533 | 2/20 | 0.62 |
| ▸ | FYN | P06241 | 2/20 | 0.62 |
| ▸ | MMP9 | P14780 | 2/20 | 0.62 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Catechol SCHEMBL60031 | 0.97 | MAPT (0.67) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL28146235 | 0.94 | MAPT (0.62) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL27512512 | 0.94 | MAPT (0.62) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL28370781 | 0.94 | MAPT (0.62) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL27989077 | 0.91 | MAPT (0.59) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL28297565 | 0.91 | MAPT (0.59) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL8216553 | 0.87 | ALDH1A1 (0.48) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL3985412 | 0.86 | ALDH1A1 (0.53) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL2279087 | 0.85 | ALDH1A1 (0.59) | MAPTKDM4ELMNAALDH1A1ALOX15 | |
| Catechol SCHEMBL3632973 | 0.84 | ALDH1A1 (0.50) | MAPTKDM4ELMNAALDH1A1ALOX15 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8329589-B2 | Semiconductor device with gate-undercutting recessed region | TEXAS INSTRUMENTS INCORPORATED (US) | 2012-12-11 | — | — | US | claimed |
| US-20110318901-A1 | SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION | TEXAS INSTRUMENTS INCORPORATED (US) | 2011-12-29 | — | — | US | claimed |
| US-8703509-B2 | Method for manufacturing a substrate for liquid-ejecting heads and a liquid-ejecting head | CANON KABUSHIKI KAISHA (JP) | 2014-04-22 | — | — | US | disclosed |
| US-8450906-B2 | Piezoelectric thin-film resonator | TAIYO YUDEN CO., LTD. (JP) | 2013-05-28 | — | — | US | disclosed |
| US-8329589-B2 | Semiconductor device with gate-undercutting recessed region | TEXAS INSTRUMENTS INCORPORATED (US) | 2012-12-11 | — | — | US | disclosed |
| US-8288805-B2 | Semiconductor device with gate-undercutting recessed region | TEXAS INSTRUMENTS INCORPORATED (US) | 2012-10-16 | — | — | US | disclosed |
| US-20120200199-A1 | PIEZOELECTRIC THIN-FILM RESONATOR | TAIYO YUDEN CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-8222970-B2 | Resonant device, communication module, communication device, and method for manufacturing resonant device | TAIYO YUDEN CO., LTD. (JP) | 2012-07-17 | — | — | US | disclosed |
| US-20110316089-A1 | SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION | TEXAS INSTRUMENTS INCORPORATED (US) | 2011-12-29 | — | — | US | disclosed |
| US-20110318901-A1 | SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION | TEXAS INSTRUMENTS INCORPORATED (US) | 2011-12-29 | — | — | US | disclosed |
| US-8049254-B2 | Semiconductor device with gate-undercutting recessed region | TEXAS INSTRUMENTS INCORPORATED (US) | 2011-11-01 | — | — | US | disclosed |
| US-20010024876-A1 | Fabrication process of semiconductor substrate | SAKAGUCHI KIYOFUMI (JP) | 2001-09-27 | — | — | US | disclosed |
| US-6294478-B1 | Fabrication process for a semiconductor substrate | CANON KABUSHIKI KAISHA (JP) | 2001-09-25 | — | — | US | disclosed |
| US-6112001-A | Optical coupler and a method of producing it | KYOCERA CORPORATION (JP) | 2000-08-29 | — | — | US | disclosed |
| US-6100165-A | Method of manufacturing semiconductor article | CANON KABUSHIKI KAISHA (JP) | 2000-08-08 | — | — | US | disclosed |
| US-6054363-A | Method of manufacturing semiconductor article | CANON KABUSHIKI KAISHA (JP) | 2000-04-25 | — | — | US | disclosed |
| US-5439843-A | Forming monocrystal semiconductor thin film on porous substrate via thin film of same material, bonding second member via insulating layer having specified thermal expansion coefficient, etching away porous material and thin film | CANON KABUSHIKI KAISHA (JP) | 1995-08-08 | — | — | US | disclosed |
| US-5277748-A | Semiconductor device substrate and process for preparing the same | CANON KABUSHIKI KAISHA (JP) | 1994-01-11 | — | — | US | disclosed |
| US-4580439-A | Low power gas detector | RICOH SEIKI CO., LTD. (JP) | 1986-04-08 | — | — | US | disclosed |
| US-4198263-A | Mask for soft X-rays and method of manufacture | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1980-04-15 | — | — | US | disclosed |