SCHEMBL1231111

SCHEMBL1231111

CCCCCCc1sc(-c2sc(-c3cccs3)c(-c3cccs3)c2-c2cccs2)c(-c2cccs2)c1CCCCCC

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 5/20 0.37
ALDH1A1 P00352 5/20 0.37
GAA P10253 2/20 0.37
GPR35 Q9HC97 1/20 0.34
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
HPGD P15428 7/20 0.32
MEN1 O00255 3/20 0.32
KMT2A Q03164 3/20 0.32
MAPT P10636 2/20 0.32
POLB P06746 2/20 0.32
ALOX15 P16050 2/20 0.32
HSD17B10 Q99714 2/20 0.32
STAT6 P42226 1/20 0.32
HTT P42858 1/20 0.32
HIF1A Q16665 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
GAPDH P04406 1/20 0.32
NR4A1 P22736 1/20 0.32
APEX1 P27695 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5373030 0.96 KDM4E (0.39) KDM4EALDH1A1GAAGPR35NPC1
SCHEMBL5361361 0.96 KDM4E (0.39) KDM4EALDH1A1GAAGPR35NPC1
SCHEMBL4775600 0.96 KDM4E (0.39) KDM4EALDH1A1GAAGPR35NPC1
SCHEMBL4219592 0.90 KDM4E (0.32) KDM4EALDH1A1GAA
SCHEMBL4777219 0.88 KDM4E (0.38) KDM4EALDH1A1GAANPC1RAB9A
SCHEMBL2762298 0.82 KDM4E (0.36) KDM4EALDH1A1GAAGPR35HPGD
SCHEMBL5715244 0.82 KDM4E (0.44) KDM4EALDH1A1GAAGPR35NPC1
SCHEMBL12913178 0.82 KDM4E (0.44) KDM4EALDH1A1GAAGPR35NPC1
SCHEMBL6798141 0.81 FBP1 (0.35) KDM4EALDH1A1GAANPC1RAB9A
SCHEMBL772036 0.79 KDM4E (0.38) KDM4EALDH1A1GAAGPR35NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 61 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1930963-B1 Method of manufacturing a semiconducting device and semiconducting device SAMSUNG DISPLAY CO LTD (KR) 2016-03-02 EP claimed
US-7932186-B2 Methods for fabricating an electronic device INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2011-04-26 US claimed
WO-2010135319-A1 NUCLEIC ACID-BASED PHOTOVOLTAIC CELL UNIVERSITY OF CONNECTICUT (US) 2010-11-25 WO claimed
US-7564053-B2 Photo-reactive organic polymeric gate insulating layer composition and organic thin film transistor using the same ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) 2009-07-21 US claimed
US-20090155964-A1 METHODS FOR FABRICATING AN ELECTRONIC DEVICE INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2009-06-18 US claimed
US-7482625-B2 Composition for thermosetting organic polymeric gate insulating layer and organic thin film transistor using the same ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) 2009-01-27 US claimed
US-20080138928-A1 Semiconducting element, organic light emitting display including the same, and method of manufacturing the semiconducting element SAMSUNG DISPLAY CO., LTD. (KR) 2008-06-12 US claimed
EP-1930963-A1 Method of manufacturing a semiconducting device Samsung SDI Co., Ltd. (KR) 2008-06-11 EP claimed
WO-2016168789-A1 SYSTEMS, DEVICES, AND METHODS FOR CONTACT MEASUREMENT AND MODULATION OF MATERIAL PROPERTIES THE ARIZONA BOARD OF REGENTS ON BEHALF OF THE UNIVERSITY OF ARIZONA (US) 2016-10-20 WO disclosed
EP-1930963-B1 Method of manufacturing a semiconducting device and semiconducting device SAMSUNG DISPLAY CO LTD (KR) 2016-03-02 EP disclosed
US-8981348-B2 Semiconducting element, organic light emitting display including the same, and method of manufacturing the semiconducting element SAMSUNG DISPLAY CO., LTD. (KR) 2015-03-17 US disclosed
US-8288765-B2 Organic transistor, method for producing organic transistor, electro-optical device, and electronic equipment SEIKO EPSON CORPORATION (JP) 2012-10-16 US disclosed
US-8274075-B2 Crosslinked polymeric dielectric materials and electronic devices incorporating same NORTHWESTERN UNIVERSITY (US) 2012-09-25 US disclosed
US-8022396-B2 Semiconductor device including an insulating layer resistant to a photolithography process, electronic device, and electronic equipment SEIKO EPSON CORPORATION (JP) 2011-09-20 US disclosed
US-20030080324-A1 n-type thiophene semiconductors NORTHWESTERN UNIVERSITY 2003-05-01 US disclosed
WO-2003034130-A2 METHODS OF FABRICATING PATTERNED LAYERS ON A SUBSTRATE SEIKO EPSON CORPORATION (DE) 2003-04-24 WO disclosed
WO-2003010778-A1 n-TYPE THIOPHENE SEMICONDUCTORS NORTHWESTERN UNIVERSITY (US) 2003-02-06 WO disclosed
US-5998804-A POLYESTERS HNA HOLDINGS, INC. (US) 1999-12-07 US disclosed
US-5963927-A Mailing system NEOPOST LIMITED (GB) 1999-10-05 US disclosed
EP-0788075-A2 Mailing system NEOPOST LIMITED (GB) 1997-08-06 EP disclosed