SCHEMBL125041

SCHEMBL125041

Oc1ccc2cc3ccc(O)cc3c(O)c2c1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ESR1 P03372 8/20 0.47
▸ ESR2 Q92731 8/20 0.47
▸ CYP1A2 P05177 1/20 0.46
▸ ALOX15 P16050 2/20 0.42
▸ HSD17B10 Q99714 2/20 0.42
▸ CYP3A4 P08684 1/20 0.42
▸ TSHR P16473 1/20 0.42
▸ HIF1A Q16665 1/20 0.42
▸ TDP1 Q9NUW8 1/20 0.42
▸ MCL1 Q07820 1/20 0.42
▸ LMNA P02545 3/20 0.39
▸ TYR P14679 1/20 0.39
▸ ABL1 P00519 1/20 0.39
▸ ABCB1 P08183 1/20 0.39
▸ BCR P11274 1/20 0.39
▸ KDM4E B2RXH2 1/20 0.39
▸ ALDH1A1 P00352 1/20 0.39
▸ MAPT P10636 1/20 0.39
▸ HTT P42858 1/20 0.39
▸ SMN1; SMN2 Q16637 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29876780 1.00 ESR1 (0.47) ESR1ESR2CYP1A2ALOX15HSD17B10
SCHEMBL14742461 0.89 CYP1A2 (0.54) ESR1ESR2CYP1A2HSD17B10CYP3A4
SCHEMBL14680504 0.87 MCL1 (0.43) ESR1ESR2CYP1A2HSD17B10MCL1
Methane SCHEMBL7938140 0.87 CYP1A2 (0.52) ESR1ESR2CYP1A2HSD17B10HIF1A
SCHEMBL670670 0.79 CYP1A2 (0.52) ESR1ESR2CYP1A2ALOX15HSD17B10
SCHEMBL3212292 0.79 PTPN22 (0.56) ESR1ESR2CYP1A2ALOX15HSD17B10
SCHEMBL29655555 0.79 PTPN22 (0.56) ESR1ESR2CYP1A2ALOX15HSD17B10
SCHEMBL29085467 0.79 CYP17A1 (0.46) ESR1ESR2CYP1A2CYP3A4MCL1
SCHEMBL13316750 0.77 ESR1 (0.42) ESR1ESR2CYP1A2MCL1
SCHEMBL2770679 0.77 CYP1A2 (0.46) ESR1ESR2CYP1A2ALOX15HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1805561-B1 ANTIREFLECTIVE COMPOSITIONS FOR PHOTORESISTS MERCK PATENT GMBH (DE) 2018-10-24 — — EP claimed
CN-105431780-B Resist underlayer film forming composition containing polymer containing nitrogen-containing cyclic compound 日产化学工业株式会社 2020-01-03 — — CN disclosed
US-10113083-B2 Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-10-30 — — US disclosed
EP-1805561-B1 ANTIREFLECTIVE COMPOSITIONS FOR PHOTORESISTS MERCK PATENT GMBH (DE) 2018-10-24 — — EP disclosed
US-20160186006-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYMER WHICH CONTAINS NITROGEN-CONTAINING RING COMPOUND NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-06-30 — — US disclosed
EP-2343597-B1 Use of an underlayer coating forming composition for lithography NISSAN CHEMICAL IND LTD (JP) 2015-08-05 — — EP disclosed
US-8778876-B2 Small-molecule inhibitors of Dengue and West Nile virus proteases THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) 2014-07-15 — — US disclosed
US-8778876-B2 Small-molecule inhibitors of Dengue and West Nile virus proteases THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) 2014-07-15 — — US disclosed
CN-101550265-B Composition for formation of underlayer film for lithography containing epoxy compound and carboxylic acid compound NISSAN CHEMICAL IND LTD 2014-04-16 — — CN disclosed
EP-1780600-B1 LOWER LAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY INCLUDING NAPHTHALENE RING HAVING HALOGEN ATOM NISSAN CHEMICAL IND LTD (JP) 2014-02-26 — — EP disclosed
EP-1805561-A2 ANTIREFLECTIVE COMPOSITIONS FOR PHOTORESISTS AZ Electronic Materials USA Corp. (US) 2007-07-11 — — EP disclosed
US-7226721-B2 Underlayer coating forming composition for lithography containing compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-06-05 — — US disclosed
EP-1780600-A1 LOWER LAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY INCLUDING NAPHTHALENE RING HAVING HALOGEN ATOM Nissan Chemical Industries, Ltd. (JP) 2007-05-02 — — EP disclosed
US-20060234156-A1 Composition for formation of underlayer film for lithography containing epoxy compound and carboxylic acid compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-10-19 — — US disclosed
US-20060210915-A1 Composition for forming lower layer film for lithography comprising compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-09-21 — — US disclosed
EP-1662769-A1 COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY COMPRISING COMPOUND HAVING PROTECTED CARBOXYL GROUP Nissan Chemical Industries, Ltd. (JP) 2006-05-31 — — EP disclosed
WO-2006030320-A2 ANTIREFLECTIVE COMPOSITIONS FOR PHOTORESISTS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2006-03-23 — — WO disclosed
US-20060058468-A1 Antireflective compositions for photoresists MERCK PATENT GMBH (DE) 2006-03-16 — — US disclosed
US-20060057501-A1 Antireflective compositions for photoresists AZ ELECTRONIC MATERIALS USA CORP. 2006-03-16 — — US disclosed
EP-1617289-A1 COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND Nissan Chemical Industries, Ltd. (JP) 2006-01-18 — — EP disclosed
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