⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13087747 | 0.89 | GAA (0.31) | — | |
| SCHEMBL107034 | 0.89 | GAA (0.31) | — | |
| SCHEMBL12918918 | 0.84 | — | — | |
| SCHEMBL17853832 | 0.82 | CYP17A1 (0.30) | — | |
| SCHEMBL47390 | 0.81 | KMT2A (0.35) | — | |
| SCHEMBL14466038 | 0.80 | — | — | |
| SCHEMBL12134119 | 0.79 | — | — | |
| SCHEMBL18802876 | 0.79 | — | — | |
| SCHEMBL22643378 | 0.78 | — | — | |
| SCHEMBL10228571 | 0.78 | HSD11B1 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230244143-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230236506-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-20 | — | — | US | disclosed |
| US-9874816-B2 | Radiation-sensitive resin composition and resist pattern-forming method | JSR CORPORATION (JP) | 2018-01-23 | — | — | US | disclosed |
| US-20170363961-A9 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-12-21 | — | — | US | disclosed |
| US-20170115570-A1 | RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER | JSR CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20160363859-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-12-15 | — | — | US | disclosed |
| US-20160202608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-07-14 | — | — | US | disclosed |
| US-20160185999-A1 | RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER | JSR CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-9323146-B2 | Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base | JSR CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-8932794-B2 | Positive photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-01-13 | — | — | US | disclosed |
| US-8932794-B2 | Positive photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-01-13 | — | — | US | disclosed |
| US-20140363769-A1 | PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20110136062-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-06-09 | — | — | US | disclosed |
| US-20110136062-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-06-09 | — | — | US | disclosed |
| WO-2010035908-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-04-01 | — | — | WO | disclosed |
| WO-2010035909-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-04-01 | — | — | WO | disclosed |