SCHEMBL107034

SCHEMBL107034

CCC(C)(C)C(=O)OC(C)(C)C12CC3CC(CC(C(C)(C)O)(C3)C1)C2

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
GAA P10253 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13087747 1.00 GAA (0.31) GAA
SCHEMBL12548522 0.89
SCHEMBL9945803 0.86 HSD11B1 (0.36)
SCHEMBL47390 0.85 KMT2A (0.35)
SCHEMBL12134120 0.84
SCHEMBL13088052 0.84 DPP4 (0.31)
SCHEMBL10203943 0.84 DPP4 (0.31)
SCHEMBL16285749 0.84 GAA (0.33) GAA
SCHEMBL13241926 0.84 ALDH1A1 (0.40) GAA
SCHEMBL22643378 0.83

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230244143-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND JSR CORPORATION (JP) 2023-08-03 US disclosed
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230236506-A2 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-07-27 US disclosed
US-20230229082-A2 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-07-20 US disclosed
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
US-9874816-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2018-01-23 US disclosed
US-20170363961-A9 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-12-21 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-20170115570-A1 RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER JSR CORPORATION (JP) 2017-04-27 US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 US disclosed
US-20100183979-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
WO-2010035909-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-04-01 WO disclosed
WO-2010035908-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-04-01 WO disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed
US-20100009288-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2010-01-14 US disclosed
US-20090325103-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2009-12-31 US disclosed
US-20090325103-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2009-12-31 US disclosed
US-20090220890-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-09-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH RER1, NOC2L, RAD51 GAA 3092/4885
US-20230229082-A2 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN RAD51, RER1, RAD1 GAA 3703/4885
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 GAA 1721/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.