SCHEMBL125964

SCHEMBL125964

O=C(O)c1c2ccccc2c(Br)c2ccccc12

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KDM4E B2RXH2 3/20 0.56
▸ ALDH1A1 P00352 2/20 0.56
▸ MEN1 O00255 2/20 0.56
▸ KMT2A Q03164 2/20 0.56
▸ CYP1A2 P05177 1/20 0.56
▸ GLA P06280 1/20 0.56
▸ HPGD P15428 1/20 0.56
▸ CYP2C19 P33261 1/20 0.56
▸ HSD17B10 Q99714 1/20 0.56
▸ PRNP P04156 1/20 0.44
▸ TDP1 Q9NUW8 1/20 0.42
▸ PDE10A Q9Y233 3/20 0.41
▸ CA12 O43570 1/20 0.41
▸ CA1 P00915 1/20 0.41
▸ CA2 P00918 1/20 0.41
▸ CA7 P43166 1/20 0.41
▸ CA9 Q16790 1/20 0.41
▸ CA14 Q9ULX7 1/20 0.41
▸ TSHR P16473 2/20 0.40
▸ DAO P14920 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11184414 0.88 KDM4E (0.52) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL29599456 0.87 KDM4E (0.68) KDM4EALDH1A1MEN1KMT2ACYP1A2
Benzene SCHEMBL10558251 0.87 KDM4E (0.68) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL70004 0.87 KDM4E (0.68) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL7814623 0.87 KMT2A (0.47) KDM4EALDH1A1MEN1KMT2ACYP1A2
Hydrochloric Acid SCHEMBL21173958 0.85 KDM4E (0.65) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL31436571 0.85 KDM4E (0.65) KDM4EALDH1A1MEN1KMT2ACYP1A2
Fluoride SCHEMBL29599355 0.82 KDM4E (0.62) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL4556957 0.80 HSD17B10 (0.45) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL25177897 0.80 KDM4E (0.60) KDM4EALDH1A1MEN1KMT2ACYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 73 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-105237337-A Novel synthesis method for 5-[10-(9-carbosyl anthryl)]-isophthalic acid UNIV ZUNYI MEDICAL 2016-01-13 — — CN claimed
US-11372330-B2 Anti-reflective coating forming composition containing reaction product of isocyanuric acid compound with benzoic acid compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2022-06-28 — — US disclosed
CN-105431780-B Resist underlayer film forming composition containing polymer containing nitrogen-containing cyclic compound 日产化学工业株式会社 2020-01-03 — — CN disclosed
US-10113083-B2 Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-10-30 — — US disclosed
US-20160186006-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYMER WHICH CONTAINS NITROGEN-CONTAINING RING COMPOUND NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-06-30 — — US disclosed
CN-105237337-A Novel synthesis method for 5-[10-(9-carbosyl anthryl)]-isophthalic acid UNIV ZUNYI MEDICAL 2016-01-13 — — CN disclosed
WO-2015132592-A1 NOVEL ISOXAZOLINES AND THEIR USE IN CONTROLLING PESTS NORBROOK LABORATORIES LIMITED (GB) 2015-09-11 — — WO disclosed
WO-2015132592-A1 NOVEL ISOXAZOLINES AND THEIR USE IN CONTROLLING PESTS NORBROOK LABORATORIES LIMITED (GB) 2015-09-11 — — WO disclosed
EP-2343597-B1 Use of an underlayer coating forming composition for lithography NISSAN CHEMICAL IND LTD (JP) 2015-08-05 — — EP disclosed
EP-1757986-B1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN NISSAN CHEMICAL IND LTD (JP) 2014-05-14 — — EP disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 — — EP disclosed
US-20060290429-A1 Composition form forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-12-28 — — US disclosed
US-20060234156-A1 Composition for formation of underlayer film for lithography containing epoxy compound and carboxylic acid compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-10-19 — — US disclosed
US-20060210915-A1 Composition for forming lower layer film for lithography comprising compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-09-21 — — US disclosed
CN-1830202-A Composition for forming lower layer film for lithography comprising compound having protected carboxyl group NISSAN CHEMICAL IND LTD (JP) 2006-09-06 — — CN disclosed
EP-1662769-A1 COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY COMPRISING COMPOUND HAVING PROTECTED CARBOXYL GROUP Nissan Chemical Industries, Ltd. (JP) 2006-05-31 — — EP disclosed
CN-1768306-A Underlayer coating forming composition for lithography containing epoxy compound and carboxylic acid compound NISSAN CHEMICAL IND LTD (JP) 2006-05-03 — — CN disclosed
EP-1617289-A1 COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND Nissan Chemical Industries, Ltd. (JP) 2006-01-18 — — EP disclosed
CN-1723418-A Composition for forming antireflection film for lithography NISSAN CHEMICAL IND LTD (JP) 2006-01-18 — — CN disclosed
EP-1560070-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2005-08-03 — — EP disclosed
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