SCHEMBL12628451

SCHEMBL12628451

CCC(C)C(=O)OC1C2CC3C1OC(=O)C3(C(F)(F)F)C2

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 5/20 0.33
KDM4E B2RXH2 2/20 0.30
ABCB11 O95342 2/20 0.30
LMNA P02545 2/20 0.30
ITGB2 P05107 2/20 0.30
ICAM1 P05362 2/20 0.30
PGR P06401 2/20 0.30
ABCB1 P08183 2/20 0.30
CYP3A4 P08684 2/20 0.30
ADORA3 P0DMS8 2/20 0.30
MAPT P10636 2/20 0.30
ADRB3 P13945 2/20 0.30
ALOX15 P16050 2/20 0.30
TSHR P16473 2/20 0.30
ITGAL P20701 2/20 0.30
TACR2 P21452 2/20 0.30
TBXA2R P21731 2/20 0.30
SLC6A2 P23975 2/20 0.30
ADORA1 P30542 2/20 0.30
AGTR1 P30556 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15800172 0.89 PPARG (0.31)
SCHEMBL22402809 0.88
SCHEMBL10203817 0.82
SCHEMBL785961 0.82 HMGCR (0.33) HMGCR
SCHEMBL9973372 0.81 HMGCR (0.34) HMGCRKDM4EABCB11PGRABCB1
SCHEMBL17853800 0.80 HMGCR (0.34) HMGCRKDM4EABCB11LMNAITGB2
SCHEMBL16591147 0.80 HMGCR (0.31) HMGCR
SCHEMBL9608731 0.80 HMGCR (0.31) HMGCR
SCHEMBL10115873 0.80
SCHEMBL18022201 0.79 HMGCR (0.34) HMGCRKDM4EABCB11LMNAITGB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9081279-B2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2015-07-14 US disclosed
US-8741537-B2 Positive resist composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2014-06-03 US disclosed
US-20140134541-A1 POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2014-05-15 US disclosed
US-8642253-B2 Resist composition for negative tone development and pattern forming method using the same FUJIFILM Incorporated (JP) 2014-02-04 US disclosed
US-7947421-B2 Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits FUJIFILM CORPORATION (JP) 2011-05-24 US disclosed
US-20110045413-A1 RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-02-24 US disclosed
US-7842452-B2 Pattern forming method FUJIFILM CORPORATION (JP) 2010-11-30 US disclosed
US-20090123880-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-05-14 US disclosed