Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 5/20 | 0.34 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.31 |
| ▸ | USP2 | O75604 | 2/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | TSHR | P16473 | 2/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.31 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.31 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.31 |
| ▸ | PGR | P06401 | 1/20 | 0.31 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.31 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.31 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.31 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.31 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.31 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.31 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.31 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.31 |
| ▸ | DRD1 | P21728 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL26793733 | 0.90 | HMGCR (0.31) | HMGCR | |
| SCHEMBL9973295 | 0.90 | HMGCR (0.32) | HMGCR | |
| SCHEMBL2740783 | 0.90 | — | — | |
| SCHEMBL10115873 | 0.89 | — | — | |
| SCHEMBL25701319 | 0.88 | — | — | |
| SCHEMBL25701314 | 0.88 | — | — | |
| SCHEMBL25701317 | 0.86 | — | — | |
| SCHEMBL14556918 | 0.85 | — | — | |
| SCHEMBL786067 | 0.83 | HMGCR (0.34) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL16001867 | 0.83 | HMGCR (0.34) | HMGCRCYP3A4USP2ALDH1A1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 144 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230400768-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230244143-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230236506-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-07-20 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230205082-A9 | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11687003-B2 | Negative resist pattern-forming method, and composition for upper layer film formation | JSR CORPORATION (JP) | 2023-06-27 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9989849-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-06-05 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| US-20070178405-A1 | Positive resist composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070172769-A1 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070172768-A1 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070148589-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070065752-A1 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-20070059639-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-15 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230229082-A2 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RAD51, RER1, RAD1 | HMGCR 2578/4885CYP3A4 2548/4885USP2 2842/4885 |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | RER1, RAD51, RFT1 | HMGCR 2954/4885CYP3A4 3647/4885USP2 3559/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | HMGCR 3605/4885CYP3A4 3044/4885USP2 4301/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.