SCHEMBL12829191

SCHEMBL12829191

CC(COC(C(F)(F)F)C(F)(F)F)C(=O)OC1C2CC3(C(F)(F)F)C(=O)OC1C3O2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12829184 0.87 — —
SCHEMBL12753599 0.87 HMGCR (0.33) —
SCHEMBL12829187 0.84 PPARG (0.31) —
SCHEMBL12829189 0.83 — —
SCHEMBL12832727 0.78 — —
SCHEMBL1219030 0.77 KDM4E (0.32) —
SCHEMBL12753783 0.75 HMGCR (0.34) —
SCHEMBL12761133 0.75 — —
SCHEMBL12761142 0.73 — —
SCHEMBL17264806 0.72 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20110076622-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-31 — — US disclosed
US-7906268-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2011-03-15 — — US disclosed
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