SCHEMBL13027645

SCHEMBL13027645

COc1cccc(CC[Si](OC)(OC)OC)c1[Si](OC)(OC)OC

nearest known ligand 0.40

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ TAAR1 Q96RJ0 1/20 0.40
▸ SMN1; SMN2 Q16637 1/20 0.38
▸ ALOX5 P09917 1/20 0.37
▸ PTGS2 P35354 1/20 0.37
▸ MTNR1A P48039 1/20 0.36
▸ MTNR1B P49286 1/20 0.36
▸ ABCB1 P08183 2/20 0.36
▸ ABCG2 Q9UNQ0 1/20 0.36
▸ CA12 O43570 1/20 0.36
▸ CA1 P00915 1/20 0.36
▸ CA2 P00918 1/20 0.36
▸ CA14 Q9ULX7 1/20 0.36
▸ IDO1 P14902 1/20 0.36
▸ SIGMAR1 Q99720 1/20 0.36
▸ AOC3 Q16853 1/20 0.36
▸ GAA P10253 1/20 0.35
▸ HPGD P15428 1/20 0.35
▸ CHRM2 P08172 1/20 0.35
▸ CHRM1 P11229 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027738 0.85 SMN1; SMN2 (0.39) TAAR1SMN1; SMN2ALOX5PTGS2ABCB1
SCHEMBL13027638 0.83 SCN8A (0.32) TAAR1
SCHEMBL13027483 0.83 CA12 (0.51) TAAR1SMN1; SMN2ABCB1ABCG2CA12
SCHEMBL13027696 0.81 PTGS2 (0.37) TAAR1SMN1; SMN2ALOX5PTGS2MTNR1A
SCHEMBL1968082 0.80 TAAR1 (0.60) TAAR1MTNR1AMTNR1BABCB1CA12
SCHEMBL13027377 0.79 TAAR1 (0.42) TAAR1ALOX5PTGS2MTNR1AMTNR1B
SCHEMBL13027460 0.78 CA1 (0.42) TAAR1SMN1; SMN2ALOX5PTGS2CA12
SCHEMBL13027655 0.78 SMN1; SMN2 (0.39) TAAR1SMN1; SMN2ALOX5PTGS2CA12
SCHEMBL13027147 0.78 CA1 (0.50) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL30276868 0.76 TAAR1 (0.42) TAAR1MTNR1AMTNR1BABCB1CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
Send feedback