SCHEMBL13027655

SCHEMBL13027655

COc1cccc([Si](OC)(OC)OC)c1CC[Si](OC)(OC)OC

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ SMN1; SMN2 Q16637 2/20 0.39
▸ CA12 O43570 1/20 0.35
▸ CA1 P00915 1/20 0.35
▸ CA2 P00918 1/20 0.35
▸ CA4 P22748 1/20 0.35
▸ CA7 P43166 1/20 0.35
▸ CA9 Q16790 1/20 0.35
▸ CA14 Q9ULX7 1/20 0.35
▸ LMNA P02545 3/20 0.34
▸ MAPT P10636 2/20 0.34
▸ MAPK1 P28482 2/20 0.33
▸ TAAR1 Q96RJ0 2/20 0.33
▸ KDM4E B2RXH2 1/20 0.33
▸ ALDH1A1 P00352 1/20 0.33
▸ TP53 P04637 1/20 0.33
▸ CYP3A4 P08684 1/20 0.33
▸ HPGD P15428 1/20 0.33
▸ ALOX15 P16050 1/20 0.33
▸ ALOX12 P18054 1/20 0.33
▸ HSD17B10 Q99714 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027460 0.87 CA1 (0.42) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL13027755 0.86 SMN1; SMN2 (0.39) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL13027651 0.85 NPBWR1 (0.32) LMNAMAPTHSD17B10MEN1KMT2A
SCHEMBL13027737 0.81 PTGS2 (0.32) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL13027428 0.81 CA12 (0.37) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL13027643 0.79 CA12 (0.34) CA12CA1CA2CA14TAAR1
SCHEMBL13027676 0.78 CD274 (0.33) —
SCHEMBL13027645 0.78 TAAR1 (0.40) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL13027483 0.77 CA12 (0.51) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL13027454 0.77 AOC3 (0.38) SMN1; SMN2CA1CA2CA4MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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