SCHEMBL13042856

SCHEMBL13042856

CC(C)(C)OC(=O)CCOC(=O)C1CC2CC1C1C3C=CC(C3)C21

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30209840 0.88 ALDH1A1 (0.32)
SCHEMBL4976985 0.83 MAPK1 (0.31)
SCHEMBL14087706 0.83
SCHEMBL27009892 0.81 POLB (0.30)
SCHEMBL14494530 0.81 ALDH1A1 (0.36)
SCHEMBL30455603 0.80
SCHEMBL30209989 0.80
SCHEMBL29325980 0.80 TSHR (0.30)
SCHEMBL22105340 0.80
SCHEMBL27009905 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2102156-B1 PHOTOACTIVE COMPOUNDS MERCK PATENT GMBH (DE) 2019-06-26 EP disclosed
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US disclosed
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US disclosed
US-20100136477-A1 Photosensitive Composition AZ ELECTRONIC MATERIALS USA CORP. 2010-06-03 US disclosed
US-20100136477-A1 Photosensitive Composition AZ ELECTRONIC MATERIALS USA CORP. 2010-06-03 US disclosed
US-7678528-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-03-16 US disclosed
US-7678528-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-03-16 US disclosed
US-7601480-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-10-13 US disclosed
US-7601480-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-10-13 US disclosed
US-7547501-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-06-16 US disclosed
US-20080085463-A1 PHOTOACTIVE COMPOUNDS AZ ELECTRONICS MATERIALS USA CORP. 2008-04-10 US disclosed
US-20080058542-A1 Photoactive Compounds RAHMAN M D 2008-03-06 US disclosed
US-20080058542-A1 Photoactive Compounds RAHMAN M D 2008-03-06 US disclosed
US-20070248913-A1 PROCESS FOR PRODUCING FILM FORMING RESINS FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2007-10-25 US disclosed
US-20070248913-A1 PROCESS FOR PRODUCING FILM FORMING RESINS FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2007-10-25 US disclosed
WO-2007057773-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-05-24 WO disclosed
US-20070111138-A1 Photoactive compounds MERCK PATENT GMBH (DE) 2007-05-17 US disclosed
US-20070111138-A1 Photoactive compounds MERCK PATENT GMBH (DE) 2007-05-17 US disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed