Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 4/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.37 |
| ▸ | MGAM | O43451 | 1/20 | 0.37 |
| ▸ | GAA | P10253 | 1/20 | 0.37 |
| ▸ | SI | P14410 | 1/20 | 0.37 |
| ▸ | MGAM2 | Q2M2H8 | 1/20 | 0.37 |
| ▸ | LMNA | P02545 | 3/20 | 0.36 |
| ▸ | USP2 | O75604 | 1/20 | 0.36 |
| ▸ | TET2 | Q6N021 | 1/20 | 0.35 |
| ▸ | RECQL | P46063 | 2/20 | 0.34 |
| ▸ | DGAT1 | O75907 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | MEN1 | O00255 | 2/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.31 |
| ▸ | GLA | P06280 | 1/20 | 0.31 |
| ▸ | CA12 | O43570 | 1/20 | 0.30 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2830033 | 0.98 | TSHR (0.42) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL7681385 | 0.86 | MGAM (0.35) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL3282107 | 0.82 | TSHR (0.40) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL10011809 | 0.81 | TSHR (0.36) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL11065243 | 0.80 | TSHR (0.39) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL2420651 | 0.78 | USP2 (0.37) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL242271 | 0.78 | GAA (0.39) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL10011332 | 0.78 | TSHR (0.37) | TSHRHSD17B10MGAMGAASI | |
| Ammonia Solution, Strong SCHEMBL28272083 | 0.78 | USP2 (0.35) | TSHRHSD17B10MGAMGAASI | |
| SCHEMBL28587367 | 0.78 | ALDH1A1 (0.45) | HSD17B10GAALMNAALDH1A1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7758681-B2 | Cobalt-based alloy electroless plating solution and electroless plating method using the same | LG CHEM, LTD. (KR) | 2010-07-20 | — | — | US | claimed |
| US-20070160857-A1 | Cobalt-based alloy electroless planting solution and electroless plating method using the same | LG CHEM, LTD. (KR) | 2007-07-12 | — | — | US | claimed |
| US-7205233-B2 | Method for forming CoWRe alloys by electroless deposition | APPLIED MATERIALS, INC. (US) | 2007-04-17 | — | — | US | claimed |
| US-20050101130-A1 | Method and tool of chemical doping CoW alloys with Re for increasing barrier properties of electroless capping layers for IC Cu interconnects | APPLIED MATERIALS, INC. | 2005-05-12 | — | — | US | claimed |
| US-6528409-B1 | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration | ADVANCED MICRO DEVICES, INC. | 2003-03-04 | — | — | US | claimed |
| CN-112526822-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2025-02-28 | — | — | CN | disclosed |
| CN-112286000-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-12-03 | — | — | CN | disclosed |
| CN-111856882-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| CN-118620392-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-09-10 | — | — | CN | disclosed |
| CN-118439621-A | Silica sol | 福吉米株式会社 | 2024-08-06 | — | — | CN | disclosed |
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| CN-117157342-A | Polypropylene lactone and preparation method | 诺沃梅尔公司 | 2023-12-01 | — | — | CN | disclosed |
| US-7758681-B2 | Cobalt-based alloy electroless plating solution and electroless plating method using the same | LG CHEM, LTD. (KR) | 2010-07-20 | — | — | US | disclosed |
| US-20090143490-A1 | SILICA SOL AND METHOD FOR PRODUCING THE SAME | FUSO CHEMICAL CO., LTD. (JP) | 2009-06-04 | — | — | US | disclosed |
| CN-101336309-A | Cobalt-based alloy electroless plating solution and electroless plating method using the same | LG CHEMICAL LTD (KR) | 2008-12-31 | — | — | CN | disclosed |
| US-20070160857-A1 | Cobalt-based alloy electroless planting solution and electroless plating method using the same | LG CHEM, LTD. (KR) | 2007-07-12 | — | — | US | disclosed |
| WO-2007075063-A1 | COBALT-BASED ALLOY ELECTROLESS PLATING SOLUTION AND ELECTROLESS PLATING METHOD USING THE SAME | LG CHEM, LTD. (KR) | 2007-07-05 | — | — | WO | disclosed |
| US-7205233-B2 | Method for forming CoWRe alloys by electroless deposition | APPLIED MATERIALS, INC. (US) | 2007-04-17 | — | — | US | disclosed |
| US-20050101130-A1 | Method and tool of chemical doping CoW alloys with Re for increasing barrier properties of electroless capping layers for IC Cu interconnects | APPLIED MATERIALS, INC. | 2005-05-12 | — | — | US | disclosed |
| US-6528409-B1 | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration | ADVANCED MICRO DEVICES, INC. | 2003-03-04 | — | — | US | disclosed |