SCHEMBL13135697

SCHEMBL13135697

C[Si](C)(C)C#CC12CC3C4CC5(C#C[Si](C)(C)C)CC3C(C1)C(C5)C4C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13109265 0.89
SCHEMBL14556472 0.82
SCHEMBL10301344 0.81
SCHEMBL13109255 0.72 ALDH1A1 (0.30)
SCHEMBL13889169 0.68
SCHEMBL13628678 0.66
SCHEMBL14066964 0.65
SCHEMBL22545711 0.62
SCHEMBL670061 0.61
Bromide SCHEMBL22501336 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7799843-B2 Film FUJIFILM CORPORATION (JP) 2010-09-21 US disclosed
US-20090227736-A1 COMPOSITION FOR FORMING A FILM, INSULATING FILM OBTAINED FROM THE COMPOSITION, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2009-09-10 US disclosed
US-20090221778-A1 insulating film; mechanical strength; semiconductors; uniform thickness; film formed by irradiating a silsesquioxane compound with microwaves having a frequency of 5.8 GHz; shorter treatment times and lower temperature; also a hydrocarbon cage compound polymer (adamantane) FUJIFILM COPORATION (JP) 2009-09-03 US disclosed
US-20090221779-A1 FILM FORMING COMPOSITION, INSULATING FILM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2009-09-03 US disclosed
US-7569649-B2 Film forming composition, insulating film, and electronic device FUJIFILM CORPORATION (JP) 2009-08-04 US disclosed
US-7534292-B2 Film-forming composition, insulating film obtained from the composition and electronic device having the same FUJIFILM CORPORATION (JP) 2009-05-19 US disclosed
US-7501185-B2 Film-forming composition, insulating material-forming composition, insulating film and electronic device FUJIFILM CORPORATION (JP) 2009-03-10 US disclosed
US-20090048421-A1 FILM FORMING COMPOSITION, FILM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2009-02-19 US disclosed
US-20080227943-A1 METHOD OF STORING COATING SOLUTION FOR FORMING INTERLAYER INSULATING FILM FOR SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-20080161521-A1 PRODUCTION METHOD OF INSULATING FILM FORMING COMPOSITION, INSULATING FILM FORMING COMPOSITION PRODUCED BY THE PRODUCTION METHOD, INSULATING FILM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2008-07-03 US disclosed
US-20080161532-A1 COMPOSITION FOR FORMING LOW-DIELECTRIC-CONSTANT FILM, INSULATING FILM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2008-07-03 US disclosed
US-20080081131-A1 INSULATING FILM FORMATION PROCESS FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080076850-A1 PRODUCTION METHOD OF INSULATING FILM, INSULATING FILM, STACKED PRODUCT AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20080076888-A1 FILM FORMING COMPOSITION, INSULATING FILM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20080076889-A1 FILM FORMING COMPOSITION, FILM AND INSULATING FILM FORMED FROM THE COMPOSITION, AND ELECTRONIC DEVICE HAVING THE INSULATING FILM FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20070246684-A1 Film forming composition FUJIFILM CORPORATION (JP) 2007-10-25 US disclosed
US-20070224436-A1 Film forming composition FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
US-20070135585-A1 Film forming composition, insulating film using the composition, and electronic device having the insulating film FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed