SCHEMBL1315484

SCHEMBL1315484

CCC(C)[Si](C)(C)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2490975 0.79 TSHR (0.30)
SCHEMBL1313493 0.77
SCHEMBL4999843 0.77
SCHEMBL1313966 0.74 LMNA (0.30)
SCHEMBL107700 0.74
SCHEMBL18095330 0.74
SCHEMBL1317123 0.74
SCHEMBL9978573 0.74
SCHEMBL108610 0.73 TSHR (0.30)
SCHEMBL1315717 0.73 TSHR (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114616652-A Monoalkoxysilanes and dense organosilica films prepared therefrom 弗萨姆材料美国有限责任公司 2022-06-10 CN claimed
CN-113024725-A Curable composition, cured product, (meth) acrylic resin, and compound 东京应化工业株式会社 2021-06-25 CN disclosed
CN-113031399-A Resin composition, cured product, and siloxane-modified (meth) acrylic resin 东京应化工业株式会社 2021-06-25 CN disclosed
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
US-9248693-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-8992790-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-31 US disclosed
CN-102947393-B Typical metal containing polysiloxane composition, process for production of same, and uses thereof TOSOH CORP 2015-03-11 CN disclosed
US-8932953-B2 Composition for forming a silicon-containing resist underlayer film and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-8907038-B2 Typical metal containing polysiloxane composition, process for its production, and its uses TOSOH CORPORATION (JP) 2014-12-09 US disclosed
US-20130284699-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-8163950-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-24 US disclosed
US-20110275849-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2011-11-10 US disclosed
US-8008521-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes HOKKO CHEMICAL INDUSTRY CO., LTD. (JP) 2011-08-30 US disclosed
US-20090082585-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2009-03-26 US disclosed
US-7459577-B2 Reacting a chlorosilane with grignard reagent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20050070730-A1 Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-31 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed