SCHEMBL132883

SCHEMBL132883

CCC(C)(C)C(=O)OC(CC)(CC)C1CCCC1

nearest known ligand 0.39

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
FKBP1A P62942 10/20 0.39
HMGCR P04035 2/20 0.36
CCR2 P41597 1/20 0.34
RIPK1 Q13546 1/20 0.33
CHRM2 P08172 2/20 0.32
CHRM4 P08173 2/20 0.32
CHRM1 P11229 2/20 0.32
CHRM3 P20309 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL683458 0.98 FKBP1A (0.38) FKBP1AHMGCRCCR2RIPK1CHRM2
SCHEMBL112273 0.98 FKBP1A (0.38) FKBP1AHMGCRCCR2RIPK1CHRM2
SCHEMBL16590907 0.98 FKBP1A (0.38) FKBP1AHMGCRCCR2RIPK1CHRM2
SCHEMBL16744070 0.93 FKBP1A (0.35) FKBP1AHMGCRRIPK1
SCHEMBL18802853 0.89 FKBP1A (0.35) FKBP1AHMGCRCCR2RIPK1
SCHEMBL18802873 0.88 FKBP1A (0.37) FKBP1AHMGCRCCR2CHRM2CHRM4
SCHEMBL15978044 0.88 HSD11B1 (0.36) FKBP1A
SCHEMBL18802856 0.86 HMGCR (0.32) FKBP1AHMGCR
SCHEMBL130743 0.86 FKBP1A (0.36) FKBP1AHMGCRCCR2CHRM2CHRM4
SCHEMBL18802849 0.86 FKBP1A (0.34) FKBP1AHMGCRCHRM2CHRM4CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 48 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170242338-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-08-24 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-9316908-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-19 US disclosed
US-9274424-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2016-03-01 US disclosed
US-20110014570-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-7799506-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-09-21 US disclosed
US-20090253070-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-08 US disclosed
US-20090087784-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20090087776-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20090087789-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-7498116-B2 Resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080241750-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20070172761-A1 Positive photosensitive composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed