SCHEMBL13296168

SCHEMBL13296168

CCC(C)C(=O)NCc1cccc(Br)c1

nearest known ligand 0.51

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 3/20 0.51
▸ TP53 P04637 1/20 0.51
▸ POLB P06746 1/20 0.51
▸ LMNA P02545 2/20 0.50
▸ HPGD P15428 1/20 0.50
▸ MTOR P42345 1/20 0.49
▸ NPC1 O15118 1/20 0.48
▸ ALOX5 P09917 1/20 0.47
▸ MME P08473 1/20 0.46
▸ ERAP2 Q6P179 1/20 0.45
▸ ERAP1 Q9NZ08 1/20 0.45
▸ LNPEP Q9UIQ6 1/20 0.45
▸ PTGES O14684 1/20 0.45
▸ ALDH1A1 P00352 1/20 0.45
▸ CYP3A4 P08684 1/20 0.45
▸ SMN1; SMN2 Q16637 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15623780 0.89 MME (0.51) MAPTPOLBLMNAHPGDMME
SCHEMBL31444810 0.85 MAPT (0.53) MAPTTP53POLBLMNAHPGD
SCHEMBL26205760 0.82 MAPT (0.49) MAPTTP53POLBLMNAHPGD
SCHEMBL15623819 0.82 TSHR (0.47) MAPTLMNAMMEALDH1A1CYP3A4
SCHEMBL12302906 0.81 ERAP2 (0.63) MMEERAP2ERAP1LNPEPPTGES
SCHEMBL7609436 0.81 LMNA (0.52) MAPTTP53POLBLMNAHPGD
SCHEMBL10031574 0.81 MME (0.65) MAPTPOLBLMNAMMEALDH1A1
SCHEMBL1516159 0.81 MME (0.65) MAPTPOLBLMNAMMEALDH1A1
SCHEMBL10283303 0.81 MME (0.65) MAPTPOLBLMNAMMEALDH1A1
SCHEMBL13039581 0.80 BCHE (0.50) LMNAMMEALDH1A1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7736822-B2 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2010-06-15 — — US disclosed
US-20100081081-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-04-01 — — US disclosed
US-7309560-B2 Composition for forming anti-reflective coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-12-18 — — US disclosed
US-20070190459-A1 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2007-08-16 — — US disclosed
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