SCHEMBL133225

SCHEMBL133225

C[C@H](CCC(=O)OC(C)(C)C)[C@H]1CC[C@H]2[C@@H]3CC[C@@H]4C[C@H](O)CC[C@]4(C)[C@H]3C[C@H](O)[C@]12C

nearest known ligand 0.81

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 2/20 0.81
▸ MEN1 O00255 2/20 0.81
▸ KMT2A Q03164 2/20 0.81
▸ USP2 O75604 2/20 0.81
▸ MAPK1 P28482 2/20 0.81
▸ LMNA P02545 1/20 0.81
▸ GPBAR1 Q8TDU6 7/20 0.76
▸ SLC10A2 Q12908 2/20 0.76
▸ TBXA2R P21731 1/20 0.76
▸ PDE3A Q14432 1/20 0.76
▸ NR1H4 Q96RI1 1/20 0.76
▸ ABCC4 O15439 1/20 0.64
▸ CA1 P00915 4/20 0.64
▸ CA2 P00918 4/20 0.64
▸ CYP2C9 P11712 1/20 0.64
▸ HIF1A Q16665 1/20 0.64
▸ VDR P11473 1/20 0.64
▸ CYP3A4 P08684 2/20 0.61
▸ SLCO1B3 Q9NPD5 1/20 0.61
▸ SLCO1B1 Q9Y6L6 1/20 0.61

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8736941 1.00 MAPT (0.81) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL16343769 0.94 MAPT (0.75) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL133837 0.94 MAPT (0.75) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL17320288 0.94 MAPT (0.75) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL8736223 0.94 MAPT (0.75) MAPTMEN1KMT2AUSP2MAPK1
SCHEMBL2289939 0.91 MAPT (0.68) MAPTMEN1KMT2AUSP2MAPK1
Methyl Deoxycholate SCHEMBL14668286 0.90 MAPT (1.00) MAPTMEN1KMT2AUSP2MAPK1
Methyl Deoxycholate SCHEMBL21846440 0.90 MAPT (1.00) MAPTMEN1KMT2AUSP2MAPK1
Methyl Deoxycholate SCHEMBL21283695 0.90 MAPT (1.00) MAPTMEN1KMT2AUSP2MAPK1
Methyl Deoxycholate SCHEMBL21904594 0.90 MAPT (1.00) MAPTMEN1KMT2AUSP2MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 644 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2296039-B1 Positive photosensitive composition FUJIFILM CORP (JP) 2013-09-25 — — EP claimed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 — — US claimed
CN-1267001-A Photoetching resin composition contg cyclic olefin polymer and saturated steroid additive IBM (US) 2000-09-20 — — CN claimed
CN-113359391-B Photoresist composition and method for forming photoresist pattern 台湾积体电路制造股份有限公司 2024-09-24 — — CN disclosed
CN-112987515-B Method of manufacturing semiconductor device and semiconductor device manufacturing tool 台湾积体电路制造股份有限公司 2024-09-06 — — CN disclosed
WO-2024127808-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2024-06-20 — — WO disclosed
US-11971659-B2 Photoresist composition and method of forming photoresist pattern TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-04-30 — — US disclosed
US-11971657-B2 Photoresist developer and method of developing photoresist TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-04-30 — — US disclosed
CN-110955112-B Photoresist composition and method for forming photoresist pattern 台湾积体电路制造股份有限公司 2024-04-26 — — CN disclosed
US-11966160-B2 Radiation-sensitive resin composition and method for forming pattern JSR CORPORATION (JP) 2024-04-23 — — US disclosed
US-11966162-B2 Photoresist composition and method of manufacturing a semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-04-23 — — US disclosed
EP-0880074-B1 An energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material LUCENT TECHNOLOGIES INC (US) 1999-10-27 — — EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 — — EP disclosed
US-5879857-A POLYMER, PHOTOACID GENERATOR, DISSOLUTION INHIBITOR LUCENT TECHNOLOGIES INC. (US) 1999-03-09 — — US disclosed
EP-0646568-B1 Tertiary butyl 4,4-bis(4'-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same SHINETSU CHEMICAL CO (JP) 1998-12-23 — — EP disclosed
US-5843624-A Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material LUCENT TECHNOLOGIES INC. (US) 1998-12-01 — — US disclosed
EP-0880074-A1 An energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material LUCENT TECHNOLOGIES INC. (US) 1998-11-25 — — EP disclosed
EP-0794458-A2 An energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material LUCENT TECHNOLOGIES INC. (US) 1997-09-10 — — EP disclosed
EP-0646568-A2 Tertiary butyl 4,4-bis(4'-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 1995-04-05 — — EP disclosed
EP-0615163-A1 Onium salts and positive resist materials using the same Shin-Etsu Chemical Co., Ltd. (JP) 1994-09-14 — — EP disclosed
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