SCHEMBL8736223

SCHEMBL8736223

CC(CCC(=O)OCC(=O)OC(C)(C)C)C1CCC2C3CCC4CC(O)CCC4(C)C3CC(O)C12C

nearest known ligand 0.75

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 2/20 0.75
▸ MEN1 O00255 2/20 0.75
▸ KMT2A Q03164 2/20 0.75
▸ USP2 O75604 2/20 0.75
▸ LMNA P02545 1/20 0.75
▸ MAPK1 P28482 1/20 0.75
▸ GPBAR1 Q8TDU6 9/20 0.70
▸ SLC10A2 Q12908 2/20 0.70
▸ TBXA2R P21731 1/20 0.70
▸ PDE3A Q14432 1/20 0.70
▸ NR1H4 Q96RI1 1/20 0.70
▸ CA1 P00915 5/20 0.64
▸ CA2 P00918 5/20 0.64
▸ ABCC4 O15439 1/20 0.60
▸ CYP2C9 P11712 1/20 0.59
▸ HIF1A Q16665 1/20 0.59
▸ VDR P11473 1/20 0.59
▸ CYP3A4 P08684 2/20 0.57
▸ SLCO1B3 Q9NPD5 1/20 0.57
▸ SLCO1B1 Q9Y6L6 1/20 0.57

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16343769 1.00 MAPT (0.75) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL133837 1.00 MAPT (0.75) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL17320288 1.00 MAPT (0.75) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL8736941 0.94 MAPT (0.81) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL133225 0.94 MAPT (0.81) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL10014096 0.92 MAPT (0.64) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL5435224 0.91 MAPT (0.88) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL14357794 0.90 MAPT (0.61) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL14357785 0.90 MAPT (0.61) MAPTMEN1KMT2AUSP2LMNA
SCHEMBL5442896 0.90 MAPT (0.77) MAPTMEN1KMT2AUSP2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2414896-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2020-11-11 — — EP disclosed
EP-2356516-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORP (JP) 2017-10-25 — — EP disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 — — US disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 — — US disclosed
US-9152048-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 — — US disclosed
US-9152048-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 — — US disclosed
US-8846290-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-09-30 — — US disclosed
US-8846290-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-09-30 — — US disclosed
US-8795944-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-08-05 — — US disclosed
US-8795944-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-08-05 — — US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 — — US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 — — US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 — — US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 — — US disclosed
WO-2011024734-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-03 — — WO disclosed
WO-2010114107-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-10-07 — — WO disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 — — US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 — — US disclosed
WO-2010067898-A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-06-17 — — WO disclosed
WO-2010067905-A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-06-17 — — WO disclosed
Send feedback