SCHEMBL13324967

SCHEMBL13324967

CCOC(=O)C1C2OC3C(OC(=O)C31)C2OC(=O)C(C)(C)CC

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 2/20 0.33
PPM1B O75688 1/20 0.32
PTPN1 P18031 1/20 0.32
PPP1CC P36873 1/20 0.32
FKBP1A P62942 2/20 0.31
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13596137 0.93 HMGCR (0.33) HMGCR
SCHEMBL13596138 0.91 FABP7 (0.33) HMGCR
SCHEMBL13324972 0.90 HMGCR (0.32) HMGCR
SCHEMBL47488 0.89 HMGCR (0.34) HMGCRFKBP1A
SCHEMBL12256541 0.88 HMGCR (0.35) HMGCR
SCHEMBL12130476 0.88 HMGCR (0.35) HMGCR
SCHEMBL13294442 0.87 HMGCR (0.35) HMGCR
SCHEMBL14208684 0.86 HMGCR (0.30) HMGCR
SCHEMBL13232094 0.86 HMGCR (0.34) HMGCR
SCHEMBL9973290 0.84 HMGCR (0.31) HMGCR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8815492-B2 Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-8815492-B2 Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-20130108964-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-20130108964-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-7718342-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-18 US disclosed
US-20100062372-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7638260-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-29 US disclosed
US-20080124653-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-29 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed