⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29273 | 0.87 | — | — | |
| SCHEMBL6793898 | 0.87 | — | — | |
| SCHEMBL3619033 | 0.87 | — | — | |
| SCHEMBL5070342 | 0.87 | — | — | |
| SCHEMBL8709356 | 0.87 | — | — | |
| SCHEMBL134770 | 0.87 | — | — | |
| SCHEMBL3025351 | 0.87 | — | — | |
| SCHEMBL43605 | 0.82 | — | — | |
| SCHEMBL115408 | 0.82 | — | — | |
| SCHEMBL107610 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 3138 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240235159-A9 | SURFACE EMITTING LASER APPARATUS AND METHOD FOR MANUFACTURING THE SAME | HLJ TECHNOLOGY CO., LTD. (TW) | 2024-07-11 | — | — | US | claimed |
| CN-115260456-B | Quantum dot composition and light-emitting device | 财团法人工业技术研究院 | 2024-06-04 | — | — | CN | claimed |
| CN-117977375-A | Surface-emitting laser device and method for manufacturing the same | 华立捷科技股份有限公司 | 2024-05-03 | — | — | CN | claimed |
| US-20240136792-A1 | SURFACE EMITTING LASER APPARATUS AND METHOD FOR MANUFACTURING THE SAME | HLJ TECH CO LTD (TW) | 2024-04-25 | — | — | US | claimed |
| US-20230326949-A1 | IMAGE SENSORS INCLUDING NANOROD PIXEL ARRAY, METHODS OF MANUFACTURING IMAGE SENSORS, AND ELECTRONIC DEVICES INCLUDING IMAGE SENSORS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-10-12 | — | — | US | claimed |
| CN-116613105-A | Method for manufacturing SOI device by using bulk silicon substrate and SOI device | 杭州积海半导体有限公司 | 2023-08-18 | — | — | CN | claimed |
| EP-3251152-B1 | DETECTOR FOR AN OPTICAL DETECTION OF AT LEAST ONE OBJECT | TRINAMIX GMBH (DE) | 2023-08-16 | — | — | EP | claimed |
| CN-116125595-A | III-V semiconductor integrated photonic device on insulator and preparation method thereof | 南方科技大学 | 2023-05-16 | — | — | CN | claimed |
| US-11614673-B2 | Nonlinear optical waveguide structures for light generation and conversion | THE BOEING COMPANY (US) | 2023-03-28 | — | — | US | claimed |
| US-20230043101-A1 | OPTICAL SYSTEM AND METHOD OF FORMING THE SAME | AMS AG (AT) | 2023-02-09 | — | — | US | claimed |
| WO-1999027587-A1 | HIGH-EFFICIENCY SOLAR CELL AND METHOD FOR FABRICATION | SANDIA CORPORATION (US) | 1999-06-03 | — | — | WO | claimed |
| US-5726465-A | Light emitting diode | TEMIC TELEFUNKEN MICROELECTRONIC GMBH (DE) | 1998-03-10 | — | — | US | claimed |
| US-5706306-A | VCSEL with distributed Bragg reflectors for visible light | MOTOROLA (US) | 1998-01-06 | — | — | US | claimed |
| EP-0654873-B1 | Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity | HEWLETT PACKARD CO (US) | 1997-02-05 | — | — | EP | claimed |
| EP-0654873-A1 | Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity | Hewlett-Packard Company (US) | 1995-05-24 | — | — | EP | claimed |
| US-5363390-A | Gallium arsenide substrate fused to gallium phosphide nonlinear crystal; doubling frequency of emitted light of blue, green or ultraviolet color | HEWLETT-PACKARD COMPANY (US) | 1994-11-08 | — | — | US | claimed |
| US-4434025-A | Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light | OSSERMAN GEORGE | 1984-02-28 | — | — | US | claimed |
| US-4025399-A | ELECTRICAL, RECORDING LAYER WITH A CONDUCTIVE AGENT, A LEUCO BASE AND A PHENOLIC RESIN | CANON KABUSHIKI KAISHA (JA) | 1977-05-24 | — | — | US | claimed |
| US-3960618-A | Epitaxial growth process for compound semiconductor crystals in liquid phase | HITACHI, LTD. (JA) | 1976-06-01 | — | — | US | claimed |
| US-3959522-A | Method for forming an ohmic contact | RCA CORPORATION (US) | 1976-05-25 | — | — | US | claimed |