SCHEMBL13359779

SCHEMBL13359779

CC(OCCOc1c(-c2ccccc2)cccc1-c1ccccc1)Oc1ccc(C(C)C)cc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
REN P00797 1/20 0.35
PPARA Q07869 8/20 0.34
PPARG P37231 7/20 0.34
ADRA2A P08913 1/20 0.34
ADRA2B P18089 1/20 0.34
ADRA2C P18825 1/20 0.34
MRGPRX4 Q96LA9 1/20 0.34
MAPT P10636 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
SCN8A Q9UQD0 1/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
CYP1A2 P05177 1/20 0.33
GAA P10253 1/20 0.33
CYP2C9 P11712 1/20 0.33
PKM P14618 1/20 0.33
CYP2C19 P33261 1/20 0.33
FABP3 P05413 1/20 0.32
FABP4 P15090 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15184064 0.90 PPARA (0.33) RENPPARAPPARGADRA2AADRA2B
SCHEMBL18746063 0.90 PPARA (0.35) RENPPARAPPARGADRA2AADRA2B
SCHEMBL13359780 0.90 PPARA (0.35) RENPPARAPPARGADRA2AADRA2B
SCHEMBL682221 0.89 SLC7A5 (0.41) PPARAPPARGMAPTMEN1KMT2A
SCHEMBL14113260 0.86 PPARA (0.39) RENPPARAPPARGADRA2AADRA2B
SCHEMBL13131052 0.85 PPARA (0.33) PPARAPPARGADRA2AADRA2BADRA2C
SCHEMBL13131155 0.85 SCN8A (0.34) PPARAPPARGADRA2AADRA2BADRA2C
SCHEMBL14220585 0.85 PPARG (0.32) PPARAPPARGADRA2AADRA2BADRA2C
SCHEMBL24592658 0.84 ADRA2A (0.32) PPARAPPARGADRA2AADRA2BADRA2C
SCHEMBL9963793 0.84 CHRNB2 (0.34) PPARAPPARGADRA2AADRA2BADRA2C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed