SCHEMBL13360010

SCHEMBL13360010

CCCCC(=O)OCCC(C)C1CCC2C3C(O)CC4CC(O)CCC4(C)C3CC(O)C12C

nearest known ligand 0.72

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 3/20 0.72
KMT2A Q03164 2/20 0.72
MEN1 O00255 1/20 0.72
SLCO1B3 Q9NPD5 1/20 0.72
SLCO1B1 Q9Y6L6 1/20 0.72
USP2 O75604 1/20 0.72
GPBAR1 Q8TDU6 9/20 0.70
PDE3A Q14432 1/20 0.70
NR1H4 Q96RI1 1/20 0.70
ALDH1A1 P00352 1/20 0.68
TDP1 Q9NUW8 1/20 0.68
CYP8B1 Q9UNU6 1/20 0.67
LMNA P02545 1/20 0.65
CA1 P00915 2/20 0.65
CA2 P00918 2/20 0.65
ABCB11 O95342 1/20 0.63

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14871096 0.93 CYP3A4 (0.78) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL197081 0.93 CYP3A4 (0.78) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL31300108 0.92 CYP3A4 (0.75) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL5438281 0.91 CYP3A4 (0.80) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL721724 0.91 CYP3A4 (0.74) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL6346047 0.91 CYP3A4 (0.74) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL5440315 0.90 CYP3A4 (0.73) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL5434544 0.88 CYP3A4 (0.75) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL6345514 0.88 CYP3A4 (0.75) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL13558963 0.88 CYP3A4 (0.83) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7714316-B2 Method of manufacturing semiconductor device, acid etching resistance material and copolymer KABUSHIKI KAISHA TOSHIBA (JP) 2010-05-11 US disclosed
US-7445881-B2 Method of manufacturing semiconductor device, acid etching resistant material and copolymer KABUSHIKI KAISHA TOSHIBA (JP) 2008-11-04 US disclosed
US-20080261149-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER ASAKAWA KOJI 2008-10-23 US disclosed