SCHEMBL13383605

SCHEMBL13383605

CC1=CCC(C(=O)O)CC1O

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TSHR P16473 5/20 0.61
▸ TP53 P04637 1/20 0.61
▸ ALOX15 P16050 1/20 0.40
▸ ABAT P80404 1/20 0.37
▸ HSD11B1 P28845 4/20 0.35
▸ LMNA P02545 1/20 0.33
▸ ALDH1A1 P00352 2/20 0.32
▸ AKR1C3 P42330 1/20 0.32
▸ AKR1C1 Q04828 1/20 0.32
▸ APLNR P35414 1/20 0.31
▸ KDM4E B2RXH2 1/20 0.31
▸ USP2 O75604 1/20 0.31
▸ HPGD P15428 1/20 0.31
▸ NPSR1 Q6W5P4 1/20 0.31
▸ HSD17B10 Q99714 1/20 0.31
▸ MEN1 O00255 1/20 0.31
▸ KMT2A Q03164 1/20 0.31
▸ MAPK1 P28482 1/20 0.31
▸ CA1 P00915 1/20 0.30
▸ CA2 P00918 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12836372 0.80 TSHR (0.40) TSHRTP53ALOX15ABATLMNA
Carveol SCHEMBL15011317 0.76 TSHR (1.00) TSHRTP53ALOX15LMNAALDH1A1
Carveol SCHEMBL20586300 0.76 TSHR (1.00) TSHRTP53ALOX15LMNAALDH1A1
Carveol SCHEMBL15011580 0.76 TSHR (1.00) TSHRTP53ALOX15LMNAALDH1A1
Carveol SCHEMBL564464 0.76 TSHR (1.00) TSHRTP53ALOX15LMNAALDH1A1
Carveol SCHEMBL18339543 0.76 TSHR (1.00) TSHRTP53ALOX15LMNAALDH1A1
Carveol SCHEMBL56868 0.76 TSHR (1.00) TSHRTP53ALOX15LMNAALDH1A1
SCHEMBL21239635 0.71 TSHR (0.64) TSHRTP53ALOX15LMNAALDH1A1
SCHEMBL1243286 0.68 — —
SCHEMBL15330486 0.68 GABRP (0.41) TSHRTP53ALOX15LMNAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2177506-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND USED IN THE COMPOSITION Fujifilm Corporation (JP) 2010-04-21 — — EP disclosed
WO-2010035894-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-04-01 — — WO disclosed
WO-2009119894-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 — — WO disclosed
EP-1811339-A1 Pattern forming method Fujifilm Corporation (JP) 2007-07-25 — — EP disclosed
Send feedback