⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methane SCHEMBL28670413 | 0.87 | — | — | |
| SCHEMBL5017444 | 0.87 | — | — | |
| Phosphine SCHEMBL722469 | 0.87 | — | — | |
| SCHEMBL4072519 | 0.87 | — | — | |
| SCHEMBL21328558 | 0.87 | — | — | |
| Phosphine SCHEMBL27626535 | 0.87 | — | — | |
| SCHEMBL8836643 | 0.87 | — | — | |
| SCHEMBL4953254 | 0.82 | — | — | |
| SCHEMBL2143586 | 0.82 | — | — | |
| SCHEMBL29379185 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 336 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024156770-A1 | PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER | Atotech Deutschland GmbH & Co. KG (DE) | 2024-08-02 | — | — | WO | claimed |
| EP-4407067-A1 | PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER | Atotech Deutschland GmbH & Co. KG (DE) | 2024-07-31 | — | — | EP | claimed |
| US-11746058-B2 | Composite formed of cubic boron nitride and method of making thereof | DIAMOND INNOVATIONS, INC. (US) | 2023-09-05 | — | — | US | claimed |
| US-11746057-B2 | Composite formed of cubic boron nitride without Ti-based ceramide and method of making thereof | DIAMOND INNOVATIONS, INC. (US) | 2023-09-05 | — | — | US | claimed |
| EP-4097065-A1 | COMPOSITE FORMED OF CUBIC BORON NITRIDE WITHOUT TI-BASED CERAMIC COMPOUND AND METHOD OF MAKING THEREOF | Diamond Innovations, Inc. (US) | 2022-12-07 | — | — | EP | claimed |
| US-20220048826-A1 | COMPOSITE FORMED OF CUBIC BORON NITRIDE AND METHOD OF MAKING THEREOF | DIAMOND INNOVATIONS, INC. | 2022-02-17 | — | — | US | claimed |
| WO-2021154614-A1 | COMPOSITE FORMED OF CUBIC BORON NITRIDE WITHOUT TI-BASED CERAMIC COMPOUND AND METHOD OF MAKING THEREOF | DIAMOND INNOVATIONS, INC. (US) | 2021-08-05 | — | — | WO | claimed |
| US-20210238098-A1 | COMPOSITE FORMED OF CUBIC BORON NITRIDE WITHOUT TI-BASED CERAMIDE AND METHOD OF MAKING THEREOF | DIAMOND INNOVATIONS, INC. | 2021-08-05 | — | — | US | claimed |
| WO-2021133567-A1 | COMPOSITE BASED ON CUBIC BORON NITRIDE AND METHOD OF MAKING THEREOF | DIAMOND INNOVATIONS, INC. (US) | 2021-07-01 | — | — | WO | claimed |
| US-20200232099-A1 | PLATING BATH COMPOSITION FOR ELECTROLESS PLATING OF GOLD AND A METHOD FOR DEPOSITING A GOLD LAYER | ATOTECH DEUTSCHLAND GMBH & CO. KG (F/K/A ATOTECH DEUTSCHLAND GMBH) (DE) | 2020-07-23 | — | — | US | claimed |
| US-20080280437-A1 | Substrate Processing Method and Substrate Processing Apparatus | TOKYO ELECTRON LIMITED (JP) | 2008-11-13 | — | — | US | claimed |
| CN-100424867-C | Interconnect structure for integrated circuit | TAIWAN SEMICONDUCTOR MFG (CN) | 2008-10-08 | — | — | CN | claimed |
| US-20080226826-A1 | Apply electroless plating of cobalt tungsten boron alloy onto copper interconnection line on semiconductor substrate; post-cleaning by use of a cleaning liquid before plated surface is dried; prevent oxidation, deterioration of morphology of plated film | TOKYO ELECTON LIMITED (JP) | 2008-09-18 | — | — | US | claimed |
| US-7332764-B2 | Metal-insulator-metal (MIM) capacitor and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-02-19 | — | — | US | claimed |
| WO-2007024470-A2 | METHOD FOR FORMING A CAPPING LAYER ON A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR (US) | 2007-03-01 | — | — | WO | claimed |
| US-20070049008-A1 | Method for forming a capping layer on a semiconductor device | FREESCALE SEMICONDUCTOR, INC. | 2007-03-01 | — | — | US | claimed |
| CN-1921102-A | Interconnect structure and method of fabricating the same, and semiconductor device | TAIWAN SEMICONDUCTOR MFG (CN) | 2007-02-28 | — | — | CN | claimed |
| CN-1783476-A | Interconnect structure for integrated circuit | TAIWAN SEMICONDUCTOR MFG (CN) | 2006-06-07 | — | — | CN | claimed |
| US-20050275005-A1 | Metal-insulator-metal (MIM) capacitor and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-12-15 | — | — | US | claimed |
| US-4895770-A | VAPOR DEPOSITION OF METAL BORONITRIDE LAYER | SCHWARZKOPF DEVELOPMENT CORPORATION (US) | 1990-01-23 | — | — | US | claimed |