SCHEMBL13480372

SCHEMBL13480372

Cc1cc(C)c(-c2cc(C)c(C(F)(F)Oc3cc(C)c(C)c(C)c3)c(C)c2)c(C)c1

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
FFAR4 Q5NUL3 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19500357 1.00 FFAR4 (0.32) FFAR4
SCHEMBL14328112 0.90 FFAR4 (0.36) FFAR4
SCHEMBL12760100 0.88
SCHEMBL17070823 0.86
SCHEMBL10021605 0.84 PPARD (0.33)
SCHEMBL17070828 0.82
SCHEMBL19500346 0.81 GPR3 (0.35) FFAR4
SCHEMBL91762 0.80
SCHEMBL12760098 0.80 LPL (0.32)
SCHEMBL91699 0.79 FFAR4 (0.34) FFAR4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7662443-B2 Liquid crystals having a terminal polar radical and a terminal CH3 group and simultaneously having very high specific resistances and low threshold voltages requiring a high clearing point and low rotational viscosity; matrices MERCK PATENT GESELLSCHAFT MIT BESCHRAENKTER HAFTUNG (DE) 2010-02-16 US disclosed
US-20080121843-A1 Liquid crystals having a terminal polar radical and a terminal CH3 group and simultaneously having very high specific resistances and low threshold voltages requiring a high clearing point and low rotational viscosity; matrices HECKMEIER MICHAEL 2008-05-29 US disclosed
US-7303791-B2 Liquid crystals having a terminal polar radical and a terminal CH3 group and simultaneously having very high specific resistances and low threshold voltages requiring a high clearing point and low rotational viscosity; matrices MERCK PATENT GMBH (DE) 2007-12-04 US disclosed