SCHEMBL135622

SCHEMBL135622

CCN(C)[Ti](N(C)CC)(N(C)CC)N(C)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28034282 1.00
SCHEMBL1926155 0.75
SCHEMBL12005799 0.69
SCHEMBL2121122 0.62
N,N-Dimethylethanaminium SCHEMBL2146567 0.61 TSHR (0.36)
N,N-Dimethylethanaminium SCHEMBL16338 0.61
N,N-Dimethylethanaminium SCHEMBL352062 0.61
SCHEMBL42413 0.61
Butane SCHEMBL2058367 0.58
SCHEMBL1363064 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 878 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4688204-A1 ATOMIC LAYER DEPOSITION OF FILTRATION MEDIA Donaldson Company, Inc. (US) 2026-02-11 EP claimed
US-20260007571-A1 PHARMACEUTICAL CONTAINER WITH PH PROTECTIVE LAYER DEPOSITED BY ATOMIC LAYER DEPOSITION INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2026-01-08 US claimed
US-12447107-B2 Pharmaceutical container with pH protective layer deposited by atomic layer deposition INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2025-10-21 US claimed
US-12303461-B1 Pharmaceutical container with pH protective layer deposited by atomic layer deposition INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2025-05-20 US claimed
WO-2025037567-A1 SUBSTRATE PROCESSING METHOD 東京エレクトロン株式会社 2025-02-20 WO claimed
US-12109173-B1 Pharmaceutical container with pH protective layer deposited by atomic layer deposition INNOVATIVE SCIENTIFIC PRODUCTS, INC. (US) 2024-10-08 US claimed
US-20240325990-A1 ATOMIC LAYER DEPOSITION OF FILTRATION MEDIA DONALDSON COMPANY, INC. 2024-10-03 US claimed
WO-2024206872-A1 ATOMIC LAYER DEPOSITION OF FILTRATION MEDIA DONALDSON COMPANY, INC. (US) 2024-10-03 WO claimed
CN-117904602-A Method for depositing conformal metal or metalloid silicon nitride films 弗萨姆材料美国有限责任公司 2024-04-19 CN claimed
US-20240026532-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2024-01-25 US claimed
US-6660628-B1 Method of MOCVD Ti-based barrier metal thin films with tetrakis (methylethylamino) titanium with octane SHARP LABORATORIES OF AMERICA, INC. 2003-12-09 US claimed
US-20030124262-A1 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application APPLIED MATERIALS INC. 2003-07-03 US claimed
WO-2003050323-A1 CYCLICAL DEPOSITION OF REFRACTORY METAL SILICON NITRIDE APPLIED MATERIALS, INC. (US) 2003-06-19 WO claimed
US-20030108674-A1 Cyclical deposition of refractory metal silicon nitride APPLIED MATERIALS, INC. 2003-06-12 US claimed
WO-2003038892-A2 ATOMIC-LAYER-DEPOSITED TANTALUM NITRIDE AND ALPHA-PHASE TANTALUM AS BARRIER LAYERS FOR COPPER METALLIZATION APPLIED MATERIALS, INC. (US) 2003-05-08 WO claimed
US-20030082307-A1 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application APPLIED MATERIALS, INC. 2003-05-01 US claimed
US-20030082301-A1 Enhanced copper growth with ultrathin barrier layer for high performance interconnects APPLIED MATERIALS, INC. 2003-05-01 US claimed
US-6468604-B1 Method for manufacturing a titanium nitride thin film ANELVA CORPORATION (JP) 2002-10-22 US claimed
US-20020015791-A1 Method and manufacturing device for manufacturing a titanium nitride thin film TOBE RYOKI (JP) 2002-02-07 US claimed
US-6037013-A FORMING POROUS METAL NITRIDE LAYER OVER STRUCTURE, EXPOSING POROUS METAL NITRIDE LAYER TO SILICON-CONTAINING AMBIENT TO OBTAIN A SILICON-CONTAINING LAYER AT A SURFACE OF POROUS METAL NITRIDE LAYER, NITRIDING SILICON-CONTAINING LAYER TEXAS INSTRUMENTS INCORPORATED (US) 2000-03-14 US claimed