Zinc Ion

Zinc Ion

SCHEMBL136201

[Hg+2].[Se-2].[Se-2].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL16243215 0.87
Zinc Ion SCHEMBL19511652 0.87
Zinc Ion SCHEMBL9345537 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL30451269 0.82
Zinc Ion SCHEMBL11343192 0.82 GPR39 (0.33)
SCHEMBL156270 0.82
Zinc Ion SCHEMBL29834953 0.82
Zinc Ion SCHEMBL19508 0.82
Zinc Ion SCHEMBL23928017 0.67
Zinc Ion SCHEMBL296817 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 550 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12604655-B2 Polymer, quantum dot composition and light-emitting device employing the same INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2026-04-14 US claimed
CN-115260456-B Quantum dot composition and light-emitting device 财团法人工业技术研究院 2024-06-04 CN claimed
US-20220384728-A1 POLYMER, QUANTUM DOT COMPOSITION AND LIGHT-EMITTING DEVICE EMPLOYING THE SAME INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) 2022-12-01 US claimed
US-20210080454-A1 QUANTUM DOT BEAD HAVING MULTIFUNCTIONAL LIGAND, AND TARGET ANTIGEN DETECTION METHOD AND BIO-DIAGNOSTIC APPARATUS USING SAME ZEUS CO., LTD. (KR) 2021-03-18 US claimed
US-20210072239-A1 BIOSENSOR COMPRISING LINKER MATERIAL AND QUANTUM DOT BEADS, AND TARGET ANTIGEN DETECTION METHOD USING SAME ZEUS CO., LTD. (KR) 2021-03-11 US claimed
CN-107278323-B Method of epitaxial growth of a material interface between a III-V material and a silicon wafer providing compensation of residual strain 集成太阳能公司 2021-02-12 CN claimed
US-20190252571-A1 METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS INTEGRATED SOLAR (NO) 2019-08-15 US claimed
US-20170352536-A1 A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS INTEGRATED SOLAR (NO) 2017-12-07 US claimed
EP-3238229-A1 A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS Integrated Solar (NO) 2017-11-01 EP claimed
EP-2051303-B1 Method to detect poor infrared rays, Microchip that is able to detect poor infrared rays and apparatus working with these microchips BIOMIMETICS TECH INC (CA) 2017-07-05 EP claimed
US-20140014169-A1 NANOSTRING MATS, MULTI-JUNCTION DEVICES, AND METHODS FOR MAKING SAME TRITON SYSTEMS INC (US) 2014-01-16 US claimed
WO-2014012111-A1 NANOSTRING MATS, MULTI-JUNCTION DEVICES, AND METHODS FOR MAKING SAME TRITON SYSTEMS, INC. (US) 2014-01-16 WO claimed
US-20090001491-A1 Method for producing a microchip that is able to detect infrared light with a semiconductor at room temperature BIOMIMETICS TECHNOLOGIES INC (CA) 2009-01-01 US claimed
US-5818072-A Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same NORTH CAROLINA STATE UNIVERSITY (US) 1998-10-06 US claimed
EP-0640248-B1 Epitaxial ohmic contact for integrated heterostructure of Group II-VI semiconductor materials and method of fabricating same UNIV NORTH CAROLINA STATE (US) 1997-12-17 EP claimed
EP-0640248-A1 Epitaxial ohmic contact for integrated heterostructure of Group II-VI semiconductor materials and method of fabricating same NORTH CAROLINA STATE UNIVERSITY (US) 1995-03-01 EP claimed
US-5366927-A Method of fabricating epitaxially deposited ohmic contacts using group II-VI NORTH CAROLINA STATE UNIVERSITY (US) 1994-11-22 US claimed
US-5351255-A Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same NORTH CAROLINA STATE UNIVERSITY OF RALEIGH (US) 1994-09-27 US claimed
US-5294833-A Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same NORTH CAROLINA STATE UNIVERSITY (US) 1994-03-15 US claimed
WO-1993023883-A1 INTEGRATED HETEROSTRUCTURE OF GROUP II-VI SEMICONDUCTOR MATERIALS INCLUDING EPITAXIAL OHMIC CONTACT AND METHOD OF FABRICATING SAME NORTH CAROLINA STATE UNIVERSITY (US) 1993-11-25 WO claimed