Zinc Ion

Zinc Ion

SCHEMBL296817

[Be+2].[Se-2].[Se-2].[Zn+2]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL296861 0.87
Zinc Ion SCHEMBL296729 0.87
Zinc Ion SCHEMBL5573955 0.87
Zinc Ion SCHEMBL29834953 0.82
Zinc Ion SCHEMBL11343192 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL30451269 0.82
Zinc Ion SCHEMBL9345537 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL19508 0.82
SCHEMBL11686123 0.82
Zinc Ion SCHEMBL23928017 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8216370-B2 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2012-07-10 US claimed
EP-1715086-B1 Method for reducing defect concentrations in crystals GEN ELECTRIC (US) 2012-03-14 EP claimed
EP-1378591-B1 Method for removing defects in crystals DIAMOND INNOVATIONS INC (US) 2009-03-25 EP claimed
US-7175704-B2 Method for reducing defect concentrations in crystals DIAMOND INNOVATIONS, INC. (US) 2007-02-13 US claimed
EP-1715086-A1 Method for reducing defect concentrations in crystals GENERAL ELECTRIC COMPANY (US) 2006-10-25 EP claimed
US-20060096521-A1 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. 2006-05-11 US claimed
EP-1378591-A1 Method for removing defects in crystals General Electric Company (US) 2004-01-07 EP claimed
US-20040000266-A1 Method for reducing defect concentrations in crystals Diamond Innovations, Inc 2004-01-01 US claimed
WO-2013043809-A2 HETEROSTRUCTURE SI SOLAR CELLS USING WIDE-BANDGAP SEMICONDUCTORS ARIZONA BOARD OF REGENTS, A BODY CORPORATE OF THE STATE OF ARIZONA (US) 2013-03-28 WO disclosed
US-8216370-B2 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2012-07-10 US disclosed
EP-1715086-B1 Method for reducing defect concentrations in crystals GEN ELECTRIC (US) 2012-03-14 EP disclosed
EP-1378591-B1 Method for removing defects in crystals DIAMOND INNOVATIONS INC (US) 2009-03-25 EP disclosed
US-7175704-B2 Method for reducing defect concentrations in crystals DIAMOND INNOVATIONS, INC. (US) 2007-02-13 US disclosed
EP-1715086-A1 Method for reducing defect concentrations in crystals GENERAL ELECTRIC COMPANY (US) 2006-10-25 EP disclosed
US-20060096521-A1 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. 2006-05-11 US disclosed
EP-1378591-A1 Method for removing defects in crystals General Electric Company (US) 2004-01-07 EP disclosed
US-20040000266-A1 Method for reducing defect concentrations in crystals Diamond Innovations, Inc 2004-01-01 US disclosed