⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL541397 | 1.00 | — | — | |
| SCHEMBL285205 | 0.81 | — | — | |
| Ammonia Solution, Strong SCHEMBL278251 | 0.79 | — | — | |
| Ammonia Solution, Strong SCHEMBL7106957 | 0.79 | — | — | |
| SCHEMBL1630421 | 0.79 | — | — | |
| SCHEMBL29220047 | 0.77 | ALDH1A1 (0.32) | — | |
| SCHEMBL5959242 | 0.68 | MAOB (0.37) | — | |
| SCHEMBL5959246 | 0.68 | MAOB (0.37) | — | |
| SCHEMBL994273 | 0.67 | — | — | |
| Cyclohexane SCHEMBL7945022 | 0.66 | MAPT (0.36) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-106953234-B | Silicon-based monolithic integrated laser and manufacturing method thereof | 上海新微技术研发中心有限公司 | 2024-01-09 | — | — | CN | disclosed |
| CN-206931836-U | Silicon-based monolithic integration laser | 上海新微科技服务有限公司 | 2018-01-26 | — | — | CN | disclosed |
| CN-106953234-A | Silicon-based monolithic integration laser and preparation method thereof | 上海新微科技服务有限公司 | 2017-07-14 | — | — | CN | disclosed |
| US-8946800-B2 | Semiconductor device with protective layer and method of manufacturing same | RENESAS ELECTRONICS CORPORATION (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8648441-B2 | Semiconductor device and method of manufacturing semiconductor device | RENESAS ELECTRONICS CORPORATION (JP) | 2014-02-11 | — | — | US | disclosed |
| US-20130056850-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | RENESAS ELECTRONICS CORPORATION | 2013-03-07 | — | — | US | disclosed |
| EP-2565923-A2 | Semiconductor device and method of manufacturing semiconductor device | Renesas Electronics Corporation (JP) | 2013-03-06 | — | — | EP | disclosed |
| US-20110316161-A1 | METHOD OF PRODUCING A DUAL DAMASCENE MULTILAYER INTERCONNECTION AND MULTILAYER INTERCONNECTION STRUCTURE | RENESAS ELECTRONICS CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110284991-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | RENESAS ELECTRONICS CORPORATION | 2011-11-24 | — | — | US | disclosed |
| EP-2388820-A2 | Integration of memory cells comprising capacitors with logic circuits comprising interconnects | Renesas Electronics Corporation (JP) | 2011-11-23 | — | — | EP | disclosed |
| US-20090181535-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | NEC CORPORATION (JP) | 2009-07-16 | — | — | US | disclosed |
| US-7524908-B2 | Copolymerized high polymer film and method of manufacturing the same | NEC CORPORATION (JP) | 2009-04-28 | — | — | US | disclosed |
| US-7518247-B2 | Semiconductor device and its manufacturing method | NEC CORPORATION (JP) | 2009-04-14 | — | — | US | disclosed |
| US-20090014887-A1 | METHOD OF PRODUCING MULTILAYER INTERCONNECTION AND MULTILAYER INTERCONNECTION STRUCTURE | NEC CORPORATION (JP) | 2009-01-15 | — | — | US | disclosed |
| US-20060091557-A1 | Semiconductor device and its manufacturing method | NEC CORPORATION (JP) | 2006-05-04 | — | — | US | disclosed |
| US-20050282987-A1 | Copolymerized high polymer film and method of manufacturing the same | NEC CORPORATION (JP) | 2005-12-22 | — | — | US | disclosed |