SCHEMBL1369846

SCHEMBL1369846

O[Si](O)(O)O.[BaH2].[La]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6045708 0.91
SCHEMBL137695 0.91
SCHEMBL33435 0.91
SCHEMBL9785071 0.83
SCHEMBL11567297 0.83
SCHEMBL25400723 0.83
SCHEMBL1367575 0.83
SCHEMBL3193879 0.83
SCHEMBL721480 0.83
SCHEMBL16428631 0.83

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4748391-A Yellow green barium lanthanum silicate oxyapatite phosphor, a fluorescent lamp containing the same, and a method thereof GTE LABORATORIES INCORPORATED (US) 1988-05-31 US claimed
US-8252674-B2 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-20110287622-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN (KR) 2011-11-24 US disclosed
US-8013402-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-06 US disclosed
US-20100025781-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN 2010-02-04 US disclosed
US-7615830-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-11-10 US disclosed
US-20080016684-A1 CORROSION RESISTANT WAFER PROCESSING APPARATUS AND METHOD FOR MAKING THEREOF GENERAL ELECTRIC COMPANY (US) 2008-01-24 US disclosed
US-20080006204-A1 CORROSION RESISTANT WAFER PROCESSING APPARATUS AND METHOD FOR MAKING THEREOF GENERAL ELECTRIC COMPANY (US) 2008-01-10 US disclosed
CN-101101887-A Corrosion resistant wafer processing apparatus and method for making thereof GEN ELECTRIC (US) 2008-01-09 CN disclosed
US-7189668-B2 Barium lanthanum silicate glass-ceramics NORSK HYDRO ASA (NO) 2007-03-13 US disclosed
US-20060081948-A1 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-04-20 US disclosed
EP-1322566-B1 PROCESS FOR PREPARING BARIUM LANTHANUM SILICATE GLASS-CERAMICS NORSK HYDRO AS (NO) 2006-02-22 EP disclosed
US-20050130823-A1 Barium lanthanum silicate glass-ceramics BUDD MICHAEL (NO) 2005-06-16 US disclosed
US-20040014582-A1 Barium lanthanum silicate glass-ceramics NORSK HYDRO ASA (NO) 2004-01-22 US disclosed
EP-1322566-A1 BARIUM LANTHANUM SILICATE GLASS-CERAMICS Norsk Hydro ASA (NO) 2003-07-02 EP disclosed
WO-2002016278-A1 BARIUM LANTHANUM SILICATE GLASS-CERAMICS NORSK HYDRO ASA (NO) 2002-02-28 WO disclosed
US-5695685-A STIRRING IN SUSPENSION WITH METAL OR METALLOID COMPOUND TO PERMIT ION EXCHANGE REACTION OSRAM SYLVANIA INC. (US) 1997-12-09 US disclosed
US-4748391-A Yellow green barium lanthanum silicate oxyapatite phosphor, a fluorescent lamp containing the same, and a method thereof GTE LABORATORIES INCORPORATED (US) 1988-05-31 US disclosed
US-4748391-A Yellow green barium lanthanum silicate oxyapatite phosphor, a fluorescent lamp containing the same, and a method thereof GTE LABORATORIES INCORPORATED (US) 1988-05-31 US disclosed
US-4748391-A Yellow green barium lanthanum silicate oxyapatite phosphor, a fluorescent lamp containing the same, and a method thereof GTE LABORATORIES INCORPORATED (US) 1988-05-31 US disclosed