⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6277205 | 0.78 | — | — | |
| SCHEMBL6906690 | 0.73 | — | — | |
| SCHEMBL20261882 | 0.71 | — | — | |
| SCHEMBL10633389 | 0.71 | — | — | |
| SCHEMBL27885671 | 0.71 | — | — | |
| SCHEMBL9170345 | 0.71 | — | — | |
| SCHEMBL2380262 | 0.71 | — | — | |
| SCHEMBL9745269 | 0.70 | — | — | |
| SCHEMBL3237697 | 0.70 | — | — | |
| SCHEMBL5925748 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 83 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12497694-B2 | Method of forming low-resistivity Ru ALD through a bi-layer process and related structures | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2025-12-16 | — | — | US | claimed |
| US-20230175133-A1 | METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-06-08 | — | — | US | claimed |
| CN-115233185-A | Atomic layer deposition reactor and method for enhancing gas-solid mass transfer | 西安近代化学研究所 | 2022-10-25 | — | — | CN | claimed |
| CN-110854102-A | Metal interconnection line and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2020-02-28 | — | — | CN | claimed |
| US-20090267195-A1 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT | NEC CORPORATION (JP) | 2009-10-29 | — | — | US | claimed |
| US-7018675-B2 | Method for forming a ruthenium metal layer | MICRON TECHNOLOGY, INC. (US) | 2006-03-28 | — | — | US | claimed |
| US-20050250341-A1 | Method for manufacturing semiconductor device and substrate processing apparatus | HITACHI KOKUSAI ELECTRIC INC. (JP) | 2005-11-10 | — | — | US | claimed |
| US-20050074980-A1 | Method for forming a ruthenium metal layer | MICRON TECHNOLOGY, INC. | 2005-04-07 | — | — | US | claimed |
| US-20040043544-A1 | Manufacturing method of semiconductor device and substrate processing apparatus | HITACHI KOKUSAI ELECTRIC INC. (JP) | 2004-03-04 | — | — | US | claimed |
| US-12497694-B2 | Method of forming low-resistivity Ru ALD through a bi-layer process and related structures | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2025-12-16 | — | — | US | disclosed |
| US-20250339787-A1 | SOURCE MATERIAL COLLECTION SYSTEM, SUBSTRATE PROCESSING APPARATUS, SOURCE MATERIAL COLLECTION METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Kokusai Electric Corporation (JP) | 2025-11-06 | — | — | US | disclosed |
| EP-4632794-A1 | RAW MATERIAL COLLECTION SYSTEM, SUBSTRATE PROCESSING APPARATUS, RAW MATERIAL COLLECTION METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Kokusai Electric Corporation (JP) | 2025-10-15 | — | — | EP | disclosed |
| US-20250293022-A1 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4596748-A2 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM | Kokusai Electric Corporation (JP) | 2025-08-06 | — | — | EP | disclosed |
| US-20040043544-A1 | Manufacturing method of semiconductor device and substrate processing apparatus | HITACHI KOKUSAI ELECTRIC INC. (JP) | 2004-03-04 | — | — | US | disclosed |
| US-6617248-B1 | Method for forming a ruthenium metal layer | MICRON TECHNOLOGY, INC. | 2003-09-09 | — | — | US | disclosed |
| US-20030162357-A1 | Semiconductor device and process thereof | RENESAS ELECTRONICS CORPORATION (JP) | 2003-08-28 | — | — | US | disclosed |
| US-20030151083-A1 | Semiconductor device | RENESAS ELECTRONICS CORPORATION (JP) | 2003-08-14 | — | — | US | disclosed |
| US-6544834-B1 | Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5) | HITACHI, LTD. (JP) | 2003-04-08 | — | — | US | disclosed |
| EP-1130628-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | Hitachi, Ltd. (JP) | 2001-09-05 | — | — | EP | disclosed |