Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 7/20 | 0.59 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.59 |
| ▸ | LMNA | P02545 | 5/20 | 0.59 |
| ▸ | HTT | P42858 | 4/20 | 0.59 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.59 |
| ▸ | HPGD | P15428 | 4/20 | 0.57 |
| ▸ | MEN1 | O00255 | 2/20 | 0.57 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.57 |
| ▸ | MAPT | P10636 | 3/20 | 0.56 |
| ▸ | GAA | P10253 | 2/20 | 0.56 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.56 |
| ▸ | PKM | P14618 | 1/20 | 0.56 |
| ▸ | CRHBP | P24387 | 1/20 | 0.56 |
| ▸ | CRHR2 | Q13324 | 1/20 | 0.56 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.55 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.55 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.55 |
| ▸ | POLB | P06746 | 1/20 | 0.53 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.53 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.53 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3754233 | 0.98 | TSHR (0.58) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| SCHEMBL15461584 | 0.85 | TSHR (0.61) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| SCHEMBL249761 | 0.84 | SLC2A1 (0.54) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| SCHEMBL3759669 | 0.83 | TSHR (0.59) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| SCHEMBL11225810 | 0.82 | SLC2A1 (0.55) | TSHRLMNAHTTMCOLN3MEN1 | |
| SCHEMBL3754232 | 0.82 | TSHR (0.58) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| SCHEMBL11337934 | 0.82 | SLC2A1 (0.48) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| SCHEMBL11337933 | 0.82 | SLC2A1 (0.48) | TSHRALDH1A1LMNAHTTMCOLN3 | |
| SCHEMBL2567982 | 0.81 | ALDH1A1 (0.55) | TSHRALDH1A1LMNAHTTSMN1; SMN2 | |
| SCHEMBL2372535 | 0.81 | ALDH1A1 (0.65) | TSHRALDH1A1LMNAHTTMCOLN3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20090148791-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-7544461-B2 | Near infrared ray activation type positive resin composition | KANSAI PAINT CO., LTD. (JP) | 2009-06-09 | — | — | US | disclosed |
| US-20080318159-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-12-25 | — | — | US | disclosed |
| US-7338740-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2008-03-04 | — | — | US | disclosed |
| US-20070259279-A1 | Near Infrared Ray Activation Type Positive Resin Composition | KANSAI PAINT CO., LTD. (JP) | 2007-11-08 | — | — | US | disclosed |
| US-7285369-B2 | photoresist composition comprising resins that increases solubility in alkali developing solution by the action of an acid and photoacid generators, which exhibits high sensitivity, high resolution and stability | FUJIFILM CORPORATION (JP) | 2007-10-23 | — | — | US | disclosed |
| US-7279265-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-10-09 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7252924-B2 | Positive resist composition and method of pattern formation using the same | FUJIFILM CORPORATION (JP) | 2007-08-07 | — | — | US | disclosed |
| US-7252924-B2 | Positive resist composition and method of pattern formation using the same | FUJIFILM CORPORATION (JP) | 2007-08-07 | — | — | US | disclosed |
| US-20070128547-A1 | POSITIVE RESIST COMPOSITION | FUJI PHOTO FILM CO., LTD. | 2007-06-07 | — | — | US | disclosed |
| US-7214467-B2 | Photosensitive resin composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7198880-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-04-03 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7163776-B2 | Positive-working resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7160666-B2 | Photosensitive resin composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-09 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
| US-7157206-B2 | Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |