Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 3/20 | 0.47 |
| ▸ | ERBB2 | P04626 | 1/20 | 0.47 |
| ▸ | FYN | P06241 | 1/20 | 0.47 |
| ▸ | MAOA | P21397 | 1/20 | 0.47 |
| ▸ | ACHE | P22303 | 1/20 | 0.47 |
| ▸ | AHR | P35869 | 1/20 | 0.47 |
| ▸ | HPGD | P15428 | 5/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.42 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.42 |
| ▸ | THRB | P10828 | 1/20 | 0.42 |
| ▸ | CYP1A1 | P04798 | 2/20 | 0.40 |
| ▸ | CYP1B1 | Q16678 | 2/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.39 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.37 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.37 |
| ▸ | MEN1 | O00255 | 2/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.33 |
| ▸ | AMY1A | P0DUB6 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16241709 | 0.76 | CYP1A2 (0.52) | CYP1A2ERBB2FYNMAOAACHE | |
| SCHEMBL13899917 | 0.76 | GPR84 (0.51) | CYP1A2ERBB2FYNMAOAACHE | |
| SCHEMBL29226974 | 0.75 | CYP1A2 (0.47) | CYP1A2ERBB2FYNMAOAACHE | |
| SCHEMBL17063047 | 0.74 | ALDH1A1 (0.39) | CYP1A2HPGDALDH1A1HSD17B10THRB | |
| SCHEMBL16196359 | 0.74 | CYP1A2 (0.50) | CYP1A2ERBB2FYNMAOAACHE | |
| SCHEMBL29591550 | 0.73 | ALDH1A1 (0.34) | CYP1A2ERBB2FYNMAOAACHE | |
| SCHEMBL17063030 | 0.73 | ALDH1A1 (0.34) | CYP1A2ERBB2FYNMAOAACHE | |
| SCHEMBL16641248 | 0.72 | ERBB2 (0.34) | CYP1A2ERBB2FYNMAOAACHE | |
| SCHEMBL29591601 | 0.72 | NQO1 (0.38) | CYP1A2HPGDALDH1A1HSD17B10CYP3A4 | |
| SCHEMBL17063052 | 0.72 | NQO1 (0.38) | CYP1A2HPGDALDH1A1HSD17B10CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9568821-B2 | Patterning process | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-02-14 | — | — | US | disclosed |
| US-9568821-B2 | Patterning process | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-02-14 | — | — | US | disclosed |
| US-20170003590-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-05 | — | — | US | disclosed |
| US-20170003590-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-05 | — | — | US | disclosed |
| US-20160363866-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-15 | — | — | US | disclosed |
| US-20160363866-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-15 | — | — | US | disclosed |
| US-9040223-B2 | Resist composition, patterning process and polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9040223-B2 | Resist composition, patterning process and polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-20140178820-A1 | RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140178820-A1 | RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140065545-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-06 | — | — | US | disclosed |
| US-20140065545-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-06 | — | — | US | disclosed |
| US-7510820-B2 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-31 | — | — | US | disclosed |
| US-7510820-B2 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-31 | — | — | US | disclosed |
| US-20070122740-A1 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070122740-A1 | Resist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |