SCHEMBL14002002

SCHEMBL14002002

Cc1ccc(C(O)(C(=O)c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES1 P23141 3/20 0.52
CES2 O00748 1/20 0.52
NPC1 O15118 3/20 0.49
RAB9A P51151 3/20 0.49
SMN1; SMN2 Q16637 3/20 0.49
MAPT P10636 1/20 0.49
LMNA P02545 2/20 0.47
POLB P06746 1/20 0.47
MEN1 O00255 2/20 0.47
KMT2A Q03164 2/20 0.47
USP2 O75604 1/20 0.47
PTGS2 P35354 1/20 0.46
CA2 P00918 1/20 0.46
ALDH1A1 P00352 3/20 0.45
SRC P12931 1/20 0.44
CYP2C9 P11712 1/20 0.44
HPGD P15428 1/20 0.43
HTT P42858 1/20 0.43
PAX8 Q06710 1/20 0.43
NPSR1 Q6W5P4 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28070688 0.94 CES1 (0.53) CES1CES2NPC1RAB9ASMN1; SMN2
SCHEMBL242506 0.88 CES1 (0.54) CES1CES2SMN1; SMN2MAPTLMNA
Methoxymethane SCHEMBL11536323 0.85 CES1 (0.61) CES1CES2LMNAPOLBMEN1
SCHEMBL11627035 0.84 LMNA (0.50) CES1SMN1; SMN2MAPTLMNAPOLB
SCHEMBL8519062 0.83 CES2 (0.50) CES1CES2RAB9ASMN1; SMN2MAPT
SCHEMBL4887272 0.82 CYP2C9 (0.64) CES1CES2NPC1RAB9ASMN1; SMN2
SCHEMBL1669227 0.82 CES1 (0.57) CES1CES2NPC1RAB9ASMN1; SMN2
SCHEMBL6203510 0.81 CES1 (0.56) CES1CES2NPC1RAB9ASMN1; SMN2
SCHEMBL28453450 0.79 MAPT (0.53) CES1NPC1RAB9ASMN1; SMN2MAPT
SCHEMBL12260644 0.79 CES1 (0.53) CES1CES2NPC1RAB9ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7452657-B2 comprising one of a tannin and a derivative thereof, a crosslinking agent and a polymer; formation of a fine, highly-detailed resist pattern; nanoedge roughness can be suppressed FUJITSU LIMITED (JP) 2008-11-18 US disclosed
US-20070003862-A1 Resist composition, method of forming resist pattern, semiconductor device and method of manufacturing thereof FUJITSU LIMITED (JP) 2007-01-04 US disclosed