SCHEMBL1402206

SCHEMBL1402206

[SeH][PH](c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.37
HPGD P15428 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
MGLL Q99685 1/20 0.37
HSD17B10 Q99714 1/20 0.37
ALDH1A1 P00352 3/20 0.35
TSHR P16473 4/20 0.33
DPP4 P27487 2/20 0.33
F2 P00734 1/20 0.33
HTR2A P28223 2/20 0.32
HRH1 P35367 1/20 0.32
TDP1 Q9NUW8 3/20 0.32
CA1 P00915 2/20 0.32
CA2 P00918 2/20 0.32
CA9 Q16790 2/20 0.32
LMNA P02545 2/20 0.32
CA12 O43570 1/20 0.32
GLA P06280 1/20 0.32
CA3 P07451 1/20 0.32
CA4 P22748 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2134657 0.71 ALDH1A1 (0.35) ALDH1A1TSHRDPP4F2HTR2A
SCHEMBL9723314 0.71 ALDH1A1 (0.39) MAPTHPGDSMN1; SMN2MGLLHSD17B10
SCHEMBL26674 0.69 ALDH1A1 (0.40) MAPTHPGDSMN1; SMN2MGLLHSD17B10
SCHEMBL28748541 0.69 ALDH1A1 (0.40) MAPTHPGDSMN1; SMN2MGLLHSD17B10
SCHEMBL5028588 0.69 ALDH1A1 (0.40) MAPTHPGDSMN1; SMN2MGLLHSD17B10
SCHEMBL8881696 0.67 ALDH1A1 (0.38) MAPTHSD17B10ALDH1A1TSHRTDP1
SCHEMBL126345 0.67 CA4 (0.41) MAPTHPGDSMN1; SMN2HSD17B10ALDH1A1
SCHEMBL2511520 0.67 ALDH1A1 (0.38) MAPTHPGDSMN1; SMN2MGLLHSD17B10
Phosphine SCHEMBL20701190 0.67 ALDH1A1 (0.38) MAPTHPGDSMN1; SMN2MGLLHSD17B10
Fluoride SCHEMBL18936426 0.67 ALDH1A1 (0.38) MAPTHPGDSMN1; SMN2MGLLHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 598 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119432380-A Core-shell quantum dot, preparation method thereof and display device 苏州星烁纳米科技有限公司 2025-02-14 CN claimed
CN-114605995-B Quantum dot, method of manufacturing the same, quantum dot-polymer composite, and electronic device including the same 三星电子株式会社 2024-04-09 CN claimed
US-11935984-B2 Semiconductor nanocrystal particle, method for preparing same, and device including same SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-03-19 US claimed
CN-108865109-B Semiconductor nanocrystal particles, methods of making the same, and electronic devices including the same 三星电子株式会社 2023-12-12 CN claimed
EP-3564340-B1 QUANTUM DOT MATERIAL, PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE TCL TECH GROUP CORP (CN) 2023-10-25 EP claimed
US-11795394-B2 Quantum dot composite material, preparation method, and semiconductor device TCL TECHNOLOGY GROUP CORPORATION (CN) 2023-10-24 US claimed
US-11746293-B2 Quantum dot composite material, preparation method, and semiconductor device TCL TECHNOLOGY GROUP CORPORATION (CN) 2023-09-05 US claimed
US-11732189-B2 Quantum dots and method of manufacturing quantum dots Research & Business Foundation Sungkyunkwan University (KR) 2023-08-22 US claimed
CN-111218284-B Core-shell quantum dot, preparation method thereof and electronic device 纳晶科技股份有限公司 2023-05-23 CN claimed
US-20230121293-A1 CADMIUM-FREE QUANTUM DOTS, AND COMPOSITE AND DISPLAY DEVICE INCLUDING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2023-04-20 US claimed
US-20080252209-A1 MULTILAYER NANOCRYSTAL STRUCTURE AND METHOD FOR PRODUCING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-10-16 US claimed
EP-1980652-A2 Multilayer nanocrystal structure and method for producing the same Samsung Electronics Co., Ltd. (KR) 2008-10-15 EP claimed
US-20080168943-A1 HETEROSTRUCTURE SEMICONDUCTOR NANOWIRES AND METHOD FOR PRODUCING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-07-17 US claimed
US-20080138514-A1 PREPARATION METHOD OF MULTI-SHELL NANOCRYSTALS SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-06-12 US claimed
US-20080029760-A1 Interfused nanocrystals and method of preparing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-02-07 US claimed
US-20070059527-A1 Methods of preparing a multi-shell nanocrystal structure, multi-shell nanocrystal structures and fabricated device including the same SAMSUNG ELECTRO-MECHANICS CO., LTD. (KR) 2007-03-15 US claimed
EP-1762642-A2 Methods of preparing a multi-shell nanocrystal structure, multi-shell nanocrystal structures and fabricated device including the same Samsung Electro-Mechanics Co., Ltd. (KR) 2007-03-14 EP claimed
US-20060236918-A1 Interfused nanocrystals and method of preparing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-10-26 US claimed
US-20060185578-A1 Heterostructure semiconductor nanowires and method for producing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-08-24 US claimed
EP-1666562-A2 Interfused nanocrystals and method of preparing the same Samsung Electronics Co., Ltd. (KR) 2006-06-07 EP claimed