SCHEMBL143816

SCHEMBL143816

c1scc(C2CCCCC2)c1C1CCCCC1

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TDO2 P48775 2/20 0.39
CEL P19835 2/20 0.36
NUDT1 P36639 1/20 0.32
BACE1 P56817 1/20 0.32
HSP90AA1 P07900 1/20 0.32
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
MAPT P10636 1/20 0.32
KMT2A Q03164 1/20 0.32
PSMB5 P28074 1/20 0.32
PTGDR2 Q9Y5Y4 1/20 0.32
DAO P14920 1/20 0.31
CYP11B2 P19099 1/20 0.31
KDR P35968 1/20 0.31
PTGS2 P35354 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2745291 0.97 TDO2 (0.37) TDO2CEL
SCHEMBL146043 0.84 PSMB5 (0.38) TDO2CELPSMB5PTGDR2PTGS2
SCHEMBL15586727 0.74 CHRNB2 (0.31)
SCHEMBL15243172 0.73 TDO2 (0.43) TDO2CELNUDT1BACE1HSP90AA1
SCHEMBL2745058 0.69 TDP1 (0.39) BACE1KDM4EPSMB5PTGS2
SCHEMBL42781 0.69 PTGDR2 (0.48) TDO2CELPTGDR2CYP11B2PTGS2
SCHEMBL9806036 0.67 DAO (0.41) CELDAO
SCHEMBL7991677 0.67 TDO2 (0.39) TDO2CELNUDT1BACE1HSP90AA1
SCHEMBL22732970 0.67 DAO (0.50) TDO2CELHSP90AA1KDM4EMEN1
SCHEMBL2745087 0.65 TDP1 (0.36) BACE1MAPTPTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 662 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116261378-A Polythiophene derivative film, and preparation method and application thereof 深圳职业技术学院 2023-06-13 CN claimed
US-7321012-B2 Method of crosslinking intrinsically conductive polymers or intrinsically conductive polymer precursors and the articles obtained therefrom THE UNIVERSITY OF CONNECTICUT (US) 2008-01-22 US claimed
US-20050170211-A1 Organic electroluminescent element SHARP KABUSHIKI KAISHA 2005-08-04 US claimed
WO-2005014693-A1 METHOD OF CROSSLINKING INTRINSICALLY CONDUCTIVE POLYMERS OR INTRINSICALLY CONDUCTIVE POLYMER PRECURSORS AND THE ARTICLES OBTAINED THEREFROM UNIVERSITY OF CONNECTICUT (US) 2005-02-17 WO claimed
US-20040242792-A1 Method of crosslinking intrinsically conductive polymers or intrinsically conductive polymer precursors and the articles obtained therefrom CONNECTICUT, THE UNIVERSITY OF 2004-12-02 US claimed
US-12183832-B2 Semiconductor device and manufacturing method thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2024-12-31 US disclosed
US-20230337458-A1 LIGHT-EMITTING DEVICE SEMICONDUCTOR ENERGY LAB (JP) 2023-10-19 US disclosed
US-11778870-B2 Display device, electronic apparatus, and method of fabricating the display device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2023-10-03 US disclosed
US-11711936-B2 Light-emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2023-07-25 US disclosed
CN-116261378-A Polythiophene derivative film, and preparation method and application thereof 深圳职业技术学院 2023-06-13 CN disclosed
US-20230165065-A1 DISPLAY DEVICE, ELECTRONIC APPARATUS, AND METHOD OF FABRICATING THE DISPLAY DEVICE SEMICONDUCTOR ENERGY LAB (JP) 2023-05-25 US disclosed
US-11552145-B2 Display device, electronic apparatus, and method of fabricating the display device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2023-01-10 US disclosed
US-20030062826-A1 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 2003-04-03 US disclosed
EP-1298736-A2 Light emitting device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2003-04-02 EP disclosed
CN-1407836-A Luminous device SEMICONDUCTOR ENERGY LAB (JP) 2003-04-02 CN disclosed
US-20030052843-A1 Light emitting device, method of driving a light emitting device, and electronic equipment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2003-03-20 US disclosed
US-20030038594-A1 Luminous device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2003-02-27 US disclosed
US-20030027369-A1 Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 2003-02-06 US disclosed
EP-0885251-B1 SUBSTITUTED POLYTHIOPHENES, PROCESSES FOR THEIR PREPARATION AND THEIR USE BASF AG (DE) 2001-08-16 EP disclosed
US-6242561-B1 USED AS SEMICONDUCTORS; ELECTROCHROMIC AND ANTISTATIC PROPERTIES BASF AKTIENGESELLSCHAFT (DE) 2001-06-05 US disclosed