SCHEMBL14461591

SCHEMBL14461591

CC(COc1ccccc1)OC1CC2CCC1C2

nearest known ligand 0.41

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.41
PKM P14618 1/20 0.39
KMT2A Q03164 1/20 0.39
MAOA P21397 1/20 0.39
PTGS1 P23219 1/20 0.39
LNPEP Q9UIQ6 1/20 0.37
CTSV O60911 1/20 0.36
CTSL P07711 1/20 0.36
CTSS P25774 1/20 0.36
CTSK P43235 1/20 0.36
MTNR1A P48039 3/20 0.35
MTNR1B P49286 3/20 0.35
ADRB2 P07550 1/20 0.35
ADRB1 P08588 1/20 0.35
CYP2D6 P10635 1/20 0.35
ADRB3 P13945 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14667585 0.81 HPGD (0.40) MAOACTSVCTSLCTSSCTSK
SCHEMBL14461797 0.77 ALDH1A1 (0.38) LMNAPKMKMT2AMAOAPTGS1
SCHEMBL4374759 0.75 SLC6A4 (0.42) PKMKMT2A
SCHEMBL14461592 0.75 NPC1 (0.43) LMNAKMT2AMAOAPTGS1MTNR1A
SCHEMBL14461682 0.72 ALDH1A1 (0.36) LMNACTSVCTSLCTSSCTSK
SCHEMBL16590944 0.71 ATM (0.37) LMNALNPEPCTSVCTSLCTSS
SCHEMBL14315577 0.70 CTSV (0.35) KMT2ALNPEPCTSVCTSLCTSS
SCHEMBL14461618 0.70 SLC6A4 (0.36) CTSVCTSLCTSSCTSK
SCHEMBL11580223 0.68 MCHR1 (0.49) PKMKMT2A
SCHEMBL8290445 0.68 ATM (0.38) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed