SCHEMBL14616652

SCHEMBL14616652

CC(C)c1cc(C(C)C)c(S(=O)(=O)NS(C)(=O)=O)c(C(C)C)c1

nearest known ligand 0.56

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
FABP4 P15090 6/20 0.56
FABP3 P05413 2/20 0.56
FABP5 Q01469 1/20 0.56
GAA P10253 1/20 0.48
HDAC1 Q13547 1/20 0.47
TDP1 Q9NUW8 1/20 0.45
NR3C1 P04150 1/20 0.41
ALDH1A1 P00352 1/20 0.41
PDE4B Q07343 1/20 0.40
GABRA1 P14867 1/20 0.37
GABRB2 P47870 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
F10 P00742 1/20 0.36
NPY5R Q15761 1/20 0.36
EPHX2 P34913 1/20 0.36
ADAM17 P78536 1/20 0.36
ENPP3 O14638 1/20 0.35
ENPP1 P22413 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21922801 0.90 FABP4 (0.62) FABP4FABP3FABP5GAAHDAC1
SCHEMBL10452159 0.85 FABP4 (0.60) FABP4FABP3FABP5GAAHDAC1
SCHEMBL21943909 0.82 FABP4 (0.40) FABP4FABP3FABP5GAAHDAC1
SCHEMBL21923046 0.80 FABP4 (0.50) FABP4FABP3FABP5GAAHDAC1
SCHEMBL1767682 0.79 FABP4 (0.63) FABP4FABP3FABP5GAAHDAC1
SCHEMBL675038 0.79 FABP4 (0.58) FABP4FABP3FABP5GAAHDAC1
SCHEMBL21923051 0.78 FABP4 (0.49) FABP4FABP3FABP5GAAHDAC1
SCHEMBL8243105 0.78 FABP4 (0.67) FABP4FABP3FABP5GAAHDAC1
SCHEMBL21923054 0.77 FABP3 (0.47) FABP4FABP3FABP5GAAHDAC1
SCHEMBL27434290 0.76 FABP4 (0.55) FABP4FABP3FABP5GAAHDAC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3644122-B1 NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2020-12-30 EP disclosed
EP-3644122-A1 ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-04-29 EP disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20130017377-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-01-17 US disclosed
US-20130017377-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-01-17 US disclosed