SCHEMBL21923046

SCHEMBL21923046

CC(C)c1cc(C(C)C)c(S(=O)(=O)NS(=O)(=O)C(F)(F)F)c(C(C)C)c1

nearest known ligand 0.50

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
FABP4 P15090 6/20 0.50
FABP3 P05413 2/20 0.50
FABP5 Q01469 1/20 0.50
GAA P10253 1/20 0.44
TDP1 Q9NUW8 1/20 0.41
ALDH1A1 P00352 1/20 0.40
HDAC1 Q13547 1/20 0.40
NR3C1 P04150 2/20 0.38
PDE4B Q07343 1/20 0.38
ADAM17 P78536 1/20 0.35
F10 P00742 1/20 0.34
NPY5R Q15761 1/20 0.34
GABRA1 P14867 1/20 0.33
GABRB2 P47870 1/20 0.33
EPHX2 P34913 1/20 0.33
ENPP3 O14638 1/20 0.33
ENPP1 P22413 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21943909 0.88 FABP4 (0.40) FABP4FABP3FABP5GAATDP1
SCHEMBL21922801 0.84 FABP4 (0.62) FABP4FABP3FABP5GAATDP1
SCHEMBL14616652 0.80 FABP4 (0.56) FABP4FABP3FABP5GAATDP1
SCHEMBL10452159 0.79 FABP4 (0.60) FABP4FABP3FABP5GAATDP1
SCHEMBL1767682 0.74 FABP4 (0.63) FABP4FABP3FABP5GAATDP1
SCHEMBL675038 0.74 FABP4 (0.58) FABP4FABP3FABP5GAATDP1
SCHEMBL16376108 0.74 SOAT2 (0.37) FABP4FABP3FABP5TDP1ALDH1A1
SCHEMBL12577657 0.73 LMNA (0.46) GAAALDH1A1
SCHEMBL21923051 0.73 FABP4 (0.49) FABP4FABP3FABP5GAATDP1
SCHEMBL28408248 0.73 HTT (0.35) FABP4GAAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111100043-B Onium salt, negative resist composition and resist pattern forming method 信越化学工业株式会社 2022-08-09 CN disclosed
EP-3644122-B1 NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2020-12-30 EP disclosed
US-20200133121-A1 ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-04-30 US disclosed
EP-3644122-A1 ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-04-29 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200133121-A1 ONIUM SALT, NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS SLC6A5, SLC11A2, LARP7 FABP4 3691/4885FABP3 4127/4885FABP5 2454/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.