⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1470718 | 1.00 | — | — | |
| SCHEMBL1470757 | 0.84 | — | — | |
| SCHEMBL1470026 | 0.84 | — | — | |
| SCHEMBL1470744 | 0.80 | — | — | |
| SCHEMBL264354 | 0.80 | — | — | |
| SCHEMBL1470664 | 0.80 | — | — | |
| SCHEMBL1470663 | 0.80 | — | — | |
| SCHEMBL14736666 | 0.79 | — | — | |
| SCHEMBL1470018 | 0.77 | — | — | |
| SCHEMBL1470694 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111095566-B | Field effect transistor, method of manufacturing the same, wireless communication device using the same, and merchandise tag | 东丽株式会社 | 2023-05-23 | — | — | CN | disclosed |
| CN-108292630-B | Ferroelectric memory element, method for manufacturing the same, memory cell using the same, and wireless communication device using the same | 东丽株式会社 | 2023-04-25 | — | — | CN | disclosed |
| US-10490748-B2 | Rectifying element, method for producing same, and wireless communication device | TORAY INDUSTRIES, INC. (JP) | 2019-11-26 | — | — | US | disclosed |
| US-20180026197-A1 | RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES, INC. (JP) | 2018-01-25 | — | — | US | disclosed |
| US-20160035457-A1 | FIELD EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2016-02-04 | — | — | US | disclosed |
| EP-2975649-A1 | FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2016-01-20 | — | — | EP | disclosed |
| US-9048445-B2 | Gate insulating material, gate insulating film and organic field-effect transistor | TORAY INDUSTRIES, INC. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20110068417-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2011-03-24 | — | — | US | disclosed |
| EP-2259289-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2010-12-08 | — | — | EP | disclosed |