⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1470018 | 1.00 | — | — | |
| SCHEMBL2208585 | 0.93 | — | — | |
| SCHEMBL31347477 | 0.86 | — | — | |
| SCHEMBL6889104 | 0.86 | — | — | |
| SCHEMBL644615 | 0.84 | — | — | |
| SCHEMBL5145780 | 0.84 | — | — | |
| SCHEMBL5143934 | 0.84 | — | — | |
| SCHEMBL409141 | 0.84 | — | — | |
| SCHEMBL28448444 | 0.84 | — | — | |
| SCHEMBL3386017 | 0.84 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3410468-B1 | N-TYPE SEMICONDUCTOR ELEMENT, COMPLEMENTARY TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND WIRELESS COMMUNICATION DEVICE IN WHICH THE SAME IS USED | TORAY INDUSTRIES (JP) | 2024-07-10 | — | — | EP | disclosed |
| EP-3382751-B1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | TORAY INDUSTRIES (JP) | 2023-09-13 | — | — | EP | disclosed |
| CN-111095566-B | Field effect transistor, method of manufacturing the same, wireless communication device using the same, and merchandise tag | 东丽株式会社 | 2023-05-23 | — | — | CN | disclosed |
| EP-3514822-B1 | METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES (JP) | 2023-04-26 | — | — | EP | disclosed |
| US-11616453-B2 | Integrated circuit, method for manufacturing same, and radio communication device using same | TORAY INDUSTRIES, INC. (JP) | 2023-03-28 | — | — | US | disclosed |
| EP-3706166-B1 | INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING SAME, AND RADIO COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES (JP) | 2023-02-08 | — | — | EP | disclosed |
| CN-115491904-A | Durable antibacterial garment | 福建省尚飞制衣有限公司 | 2022-12-20 | — | — | CN | disclosed |
| CN-115356873-A | Resin composition, light-shielding film, method for producing light-shielding film, and substrate with partition | 东丽株式会社 | 2022-11-18 | — | — | CN | disclosed |
| US-11094899-B2 | Method for manufacturing field effect transistor and method for manufacturing wireless communication device | TORAY INDUSTRIES, INC. | 2021-08-17 | — | — | US | disclosed |
| EP-3367402-B1 | CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES (JP) | 2021-07-07 | — | — | EP | disclosed |
| US-7862989-B2 | fabrication of dual damascene structures using imprint lithographic techniques; fabrication of dual damascene relief structures in imprint lithography molds | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-01-04 | — | — | US | disclosed |
| EP-2259289-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2010-12-08 | — | — | EP | disclosed |
| US-7837459-B2 | Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-11-23 | — | — | US | disclosed |
| US-20090023083-A1 | fabrication of dual damascene structures using imprint lithographic techniques; fabrication of dual damascene relief structures in imprint lithography molds | GLOBALFOUNDRIES U.S. INC. | 2009-01-22 | — | — | US | disclosed |
| US-20080305197-A1 | Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning | GLOBALFOUNDRIES U.S. INC. | 2008-12-11 | — | — | US | disclosed |
| US-20080303160-A1 | Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning | GLOBALFOUNDRIES U.S. INC. | 2008-12-11 | — | — | US | disclosed |
| US-7435074-B2 | Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-14 | — | — | US | disclosed |
| US-20050202350-A1 | Multilevel mold; used for the interconnect architecture of semiconductor chips | GLOBALFOUNDRIES U.S. INC. | 2005-09-15 | — | — | US | disclosed |
| US-6000339-A | Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device | HITACHI CHEMICAL COMPANY, LTD. (JP) | 1999-12-14 | — | — | US | disclosed |
| EP-0768352-A1 | MATERIAL FOR FORMING SILICA-BASE COATED INSULATION FILM, PROCESS FOR PRODUCING THE MATERIAL, SILICA-BASE INSULATION FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE DEVICE | HITACHI CHEMICAL CO., LTD. (JP) | 1997-04-16 | — | — | EP | disclosed |