SCHEMBL14739828

SCHEMBL14739828

COc1ccc2c(c1OC)C(c1ccc(O)cc1)(c1ccc(O)cc1)c1ccccc1-2

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PDE4D Q08499 10/20 0.46
HDAC4 P56524 1/20 0.42
HDAC2 Q92769 1/20 0.42
HDAC8 Q9BY41 1/20 0.42
SMN1; SMN2 Q16637 3/20 0.38
ESR1 P03372 2/20 0.38
ESR2 Q92731 2/20 0.38
NPC1 O15118 1/20 0.38
RAB9A P51151 1/20 0.38
MEN1 O00255 2/20 0.37
LMNA P02545 2/20 0.37
MAPT P10636 2/20 0.37
KMT2A Q03164 2/20 0.37
KDM4E B2RXH2 1/20 0.37
OPRK1 P41145 1/20 0.37
PARP1 P09874 1/20 0.36
GPR55 Q9Y2T6 2/20 0.35
CHRM2 P08172 1/20 0.35
ADORA3 P0DMS8 1/20 0.35
KCNH2 Q12809 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL995711 0.85 SMN1; SMN2 (0.46) HDAC4HDAC2HDAC8SMN1; SMN2NPC1
SCHEMBL29462973 0.75 PDE4D (0.53) PDE4DSMN1; SMN2ESR1ESR2NPC1
SCHEMBL27724351 0.75 SMN1; SMN2 (0.45) HDAC4HDAC2HDAC8SMN1; SMN2NPC1
SCHEMBL649109 0.75 PDE4D (0.53) PDE4DSMN1; SMN2ESR1ESR2NPC1
SCHEMBL14739829 0.75 ESR1 (0.47) PDE4DSMN1; SMN2ESR1ESR2MEN1
SCHEMBL28529209 0.75 ESR1 (0.57) PDE4DSMN1; SMN2ESR1ESR2MEN1
SCHEMBL29646298 0.75 ESR1 (0.47) PDE4DSMN1; SMN2ESR1ESR2MEN1
SCHEMBL14740012 0.74 ESR1 (0.49) PDE4DSMN1; SMN2ESR1ESR2MEN1
SCHEMBL900116 0.74 MEN1 (0.63) SMN1; SMN2ESR1ESR2MEN1LMNA
SCHEMBL29365596 0.74 MEN1 (0.63) SMN1; SMN2ESR1ESR2MEN1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9046764-B2 Resist underlayer film composition, method for producing polymer for resist underlayer film, and patterning process using the resist underlayer film composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-8652756-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-20130171569-A1 RESIST UNDERLAYER FILM COMPOSITION, METHOD FOR PRODUCING POLYMER FOR RESIST UNDERLAYER FILM, AND PATTERNING PROCESS USING THE RESIST UNDERLAYER FILM COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-04 US disclosed
US-20130056654-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-07 US disclosed