SCHEMBL14818161

SCHEMBL14818161

COC(=O)CN1C(C)CN(C)CC1C

nearest known ligand 0.39

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.39
BRD4 O60885 1/20 0.38
SMN1; SMN2 Q16637 2/20 0.33
KDM4E B2RXH2 1/20 0.33
GAA P10253 2/20 0.32
HSD17B10 Q99714 1/20 0.32
MGAM O43451 1/20 0.32
SI P14410 1/20 0.32
MGAM2 Q2M2H8 1/20 0.32
POLB P06746 1/20 0.32
TET2 Q6N021 1/20 0.31
HRH3 Q9Y5N1 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
ALDH1A1 P00352 1/20 0.31
KMT2A Q03164 1/20 0.31
ATM Q13315 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29153129 0.81 TSHR (0.37) TSHRBRD4SMN1; SMN2KDM4EGAA
SCHEMBL29153128 0.81 TSHR (0.37) TSHRBRD4SMN1; SMN2KDM4EGAA
SCHEMBL2663490 0.81 GSK3A (0.40) KDM4EGAAHSD17B10MGAMSI
SCHEMBL13069905 0.78 HRH3 (0.38) TSHRPOLBHRH3
SCHEMBL14818158 0.78 SMN1; SMN2 (0.31) TSHRSMN1; SMN2
SCHEMBL2653195 0.77 TSHR (0.35) TSHRBRD4SMN1; SMN2KDM4EGAA
SCHEMBL1312176 0.77 CHRNB2 (0.39) TSHRBRD4SMN1; SMN2KDM4EGAA
SCHEMBL19046223 0.76 APEX1 (0.35) SMN1; SMN2KDM4E
Hydrochloric Acid SCHEMBL30735282 0.76 CHRNB2 (0.38) TSHRSMN1; SMN2KDM4EGAAHSD17B10
SCHEMBL335294 0.75 NR1H2 (0.47) TSHRSMN1; SMN2ALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9482947-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-11-01 US disclosed
US-9423689-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-08-23 US disclosed
US-9417528-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-16 US disclosed
US-9383645-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-07-05 US disclosed
US-9250532-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-02-02 US disclosed
US-9244344-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2016-01-26 US disclosed
US-9213237-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-12-15 US disclosed
US-9140981-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, and resist film using the same, pattern forming method, electronic device manufacturing method, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2015-09-22 US disclosed
US-20150248056-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-03 US disclosed
US-9120288-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-09-01 US disclosed
US-20140234761-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-08-21 US disclosed
US-20140234762-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-08-21 US disclosed
US-20140227637-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
US-8790860-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film, pattern forming method, method for preparing electronic device, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2014-07-29 US disclosed
US-20140141360-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-05-22 US disclosed
US-20140045117-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-02-13 US disclosed
US-20130078434-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078426-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078433-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM USING THE SAME, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078432-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed