SCHEMBL1482572

SCHEMBL1482572

CCC[Si](I)(CCC)CCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1483867 0.77 TSHR (0.40)
SCHEMBL1482435 0.75
SCHEMBL1482586 0.75
SCHEMBL20500238 0.74 TSHR (0.44)
SCHEMBL31286327 0.72 TSHR (0.50)
SCHEMBL18108191 0.72 TSHR (0.50)
SCHEMBL31286331 0.72 TSHR (0.50)
SCHEMBL31286351 0.72 TSHR (0.50)
SCHEMBL18108209 0.70 TSHR (0.47)
SCHEMBL18108420 0.70 TSHR (0.47)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 78 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250060673-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RES CORP (US) 2025-02-20 US claimed
WO-2024232632-A1 TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF 한양대학교 산학협력단 2024-11-14 WO claimed
CN-113195506-B Preparation of triiodosilane 恩特格里斯公司 2024-07-30 CN claimed
EP-3894418-B1 PREPARATION OF TRIIODOSILANES ENTEGRIS INC (US) 2023-09-27 EP claimed
WO-2023115023-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RESEARCH CORPORATION (US) 2023-06-22 WO claimed
US-11670512-B2 Selective deposition on silicon containing surfaces VERSUM MATERIALS US, LLC (US) 2023-06-06 US claimed
CN-110612364-B Selective deposition on silicon-containing surfaces 弗萨姆材料美国有限责任公司 2022-04-05 CN claimed
US-20210118684-A1 SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES VERSUM MATERIALS US, LLC 2021-04-22 US claimed
WO-2018170382-A1 SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES VERSUM MATERIALS US, LLC (US) 2018-09-20 WO claimed
JP-4237257-B2 2009-03-11 JP claimed
EP-1021388-B1 PHOSPHORYLATION PROCESS AND CATALYST BIONERIS AB (SE) 2003-06-25 EP claimed
US-6479656-B1 Phosphorylation process and catalyst PERSTORP AB (SE) 2002-11-12 US claimed
JP-2001501910-A 2001-02-13 JP claimed
EP-1021388-A1 PHOSPHORYLATION PROCESS AND CATALYST PERSTORP AB (SE) 2000-07-26 EP claimed
WO-1997034853-A1 PHOSPHORYLATION PROCESS AND CATALYST PERSTORP AB (SE) 1997-09-25 WO claimed
US-20250376758-A1 SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL ASM IP HOLDING BV (NL) 2025-12-11 US disclosed
US-20250060673-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RES CORP (US) 2025-02-20 US disclosed
EP-0034924-A2 Process for preparing 3-iodomethyl cephalosporins ELI LILLY AND COMPANY (US) 1981-09-02 EP disclosed
US-4266049-A Process for 3-iodomethyl cephalosporins ELI LILLY AND COMPANY (US) 1981-05-05 US disclosed
US-3980680-A Process for the preparation of 21-desoxy-17-acyloxy-4-pregnenes and of 21-iodo-21-desoxy-17-acyl oxy-4-pregnene intermediates useful therein SCHERING CORPORATION (US) 1976-09-14 US disclosed