SCHEMBL1482435

SCHEMBL1482435

CCC[Si](I)(I)CCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1482529 0.77 TSHR (0.40)
SCHEMBL1482586 0.75
SCHEMBL1482572 0.75
SCHEMBL31286381 0.72 TSHR (0.50)
SCHEMBL31286329 0.72 TSHR (0.50)
SCHEMBL18108205 0.72 TSHR (0.50)
SCHEMBL18108229 0.72 TSHR (0.50)
SCHEMBL31286352 0.72 TSHR (0.50)
SCHEMBL31286349 0.72 TSHR (0.50)
SCHEMBL21383275 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250060673-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RES CORP (US) 2025-02-20 US claimed
WO-2024232632-A1 TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF 한양대학교 산학협력단 2024-11-14 WO claimed
WO-2023115023-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RESEARCH CORPORATION (US) 2023-06-22 WO claimed
US-20250376758-A1 SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL ASM IP HOLDING BV (NL) 2025-12-11 US disclosed
US-20250060673-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RES CORP (US) 2025-02-20 US disclosed
WO-2024232632-A1 TRANSITION METAL SUPPORTED CATALYST WITH IMPROVED HYDROGENATION ACTIVITY AND USE THEREOF 한양대학교 산학협력단 2024-11-14 WO disclosed
WO-2023115023-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RESEARCH CORPORATION (US) 2023-06-22 WO disclosed
EP-3768732-A1 PROCESS FOR FUNCTIONALIZATION OF ORGANO-ZINC COMPOUNDS WITH HALOSILANES USING BASIC NITROGEN CONTAINING HETEROCYCLES AND SILYL-FUNCTIONALIZED COMPOUNDS PREPARED THEREBY Dow Global Technologies LLC (US) 2021-01-27 EP disclosed
EP-3768733-A1 SILICON-TERMINATED TELECHELIC POLYOLEFIN COMPOSITIONS AND PROCESSES FOR PREPARING THE SAME Dow Global Technologies LLC (US) 2021-01-27 EP disclosed
US-20210017195-A1 PROCESS FOR FUNCTIONALIZATION OF ORGANO-ZINC COMPOUNDS WITH HALOSILANES USING BASIC NITROGEN CONTAINING HETEROCYCLES AND SILYL-FUNCTIONALIZED COMPOUNDS PREPARED THEREBY DOW GLOBAL TECHNOLOGIES LLC (US) 2021-01-21 US disclosed
US-20210017311-A1 SILICON-TERMINATED TELECHELIC POLYOLEFIN COMPOSITIONS AND PROCESSES FOR PREPARING THE SAME DOW GLOBAL TECHNOLOGIES LLC 2021-01-21 US disclosed
US-7528207-B2 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2009-05-05 US disclosed
US-20080268264-A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation JSR CORPORATION (JP) 2008-10-30 US disclosed
US-20080038527-A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation JSR CORPORATION (JP) 2008-02-14 US disclosed
US-20070021580-A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2007-01-25 US disclosed
EP-1746122-A1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION JSR Corporation (JP) 2007-01-24 EP disclosed
EP-1746123-A1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION JSR Corporation (JP) 2007-01-24 EP disclosed
US-20070015892-A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2007-01-18 US disclosed
EP-1705206-A1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR Corporation (JP) 2006-09-27 EP disclosed
EP-1705207-A1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR Corporation (JP) 2006-09-27 EP disclosed